NGD18N40CLBT4 18A 400V Ignition IGBT ON Semi
Some images are stock photos close Manufacturer: On Semiconductor Part Number: NGD18N40CLBT4 Amps: 18A Voltage: 400V Package: D-PAK Lead/Terminal Type: Surface Mount Number Leads/Terminals: 3	Price: $1.90 163 available for immediate delivery Product code: CS174PD
	Volume Pricing Quantity Price Each 1-9 $1.90 10-99 $1.75 100+ $1.45
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Item Specifications and Additional Information: Ignition IGBTs DPAK Package Features: - Gate-Emitter ESD Protection - Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load - Integrated ESD Diode Protection - New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area - Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices - Low Saturation Voltage - High Pulsed Current Capability Electrical Specifications @ TJ = 25°C unless otherwise stated Typical OFF Characteristics: Collector-Emitter Clamp Voltage @ TJ=-40°C to 150°C - IC = 2.0 mA: 395V - IC = 10 mA: 405V Zero Gate Voltage Collector Current - VCE = 350 V,VGE = 0 V: 2.0µA Reverse Collector-Emitter Leakage Current - VCE = -24 V: 0.7mA Reverse Collector-Emitter Clamp Voltage - IC = -75 mA: 33V Typical ON Characteristics Gate Threshold Voltage - IC = 1.0 mA, VGE = VCE: 1.4V Threshold Temperature Coefficient(Neg): 3.4mV/°C Collector-to-Emitter On-Voltage - IC = 6.0 A,VGE = 4.0 V: 1.4V Forward Transconductance @ TJ=-40°C to 150°C - VCE = 5.0 V, IC = 6.0 A: 14Mhos Typical Dynamic Characteristics @ TJ=-40°C to 150°C (VCC = 25 V, VGE = 0 V, f = 1.0 MHz) Input Capacitance: 800pF Output Capacitance: 75pF Transfer Capacitance: 7.0pF Typical Switching Characteristics @ TJ = 25°C (VCC = 300 V, IC = 6.5 A,RG = 1.0 kW, RL = 46 W,) Turn-Off Delay Time (Resistive): 4.0µs Fall Time (Resistive): 9.0µs Turn-On Delay Time: 0.7µs Applications: Ignition Direct Fuel Injection High Voltage, High Current Applications Manufactured by: ON Semiconductor Part Number: NGD18N40CLBT4 Full Datasheet: NGD18N40CLBT4

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