SPD50P03L 50P03L 50A 30V Transistor MOSFET Infineon
Some images are stock photos close Manufacturer: Infineon Part Number: SPD50P03L Amps: 50a Voltage: 30V Package: TO-252 Lead/Terminal Type: Surface Mount Number Leads/Terminals: 3	Price: $1.00 751 available for immediate delivery Product code: CS226PD
	Volume Pricing Quantity Price Each 1-9 $1.00 10-99 $0.92 100+ $0.81
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Item Specifications and Additional Information: MOSFET Small Signal Transistors P-Channel 5 Pin TO-252 Package Features: Enhancement mode Logic level 175°C operating temperature Avalanche rated dv /dt rated High current rating Static Characteristics (Tj=25°C unless otherwise noted) Drain-source breakdown voltage: -30V min. - (VGS=0 V, I D=-250 μA) Gate threshold voltage: -1.5V typ. - (VDS=VGS,I D=-250 μA) Zero gate voltage drain current: -0.1µAtyp. - (VDS=-30 V, VGS=0 V) Gate-source leakage current: -10nA typ. - (VGS=-20 V, VDS=0 V) Drain-source on-state resistance: 8.5mΩ typ. - (VGS=-4.5 V,I D=-30 A) Dynamic Characteristics: Input capacitance: 4590pF typ. - (VGS=0 V,VDS=-25 V, f =1 MHz) Output capacitance: 1220pF typ. - (VGS=0 V,VDS=-25 V, f =1 MHz) Turn-on delay time: 14.8ns typ. - (VDD=-15 V,VGS=-10 V, I D=-1 A,RG=6Ω) Rise time: 21.7ns typ. - (VDD=-15 V,VGS=-10 V, I D=-1 A,RG=6Ω) Reverse Diode Diode continuous forward current: -50A max. - (TC = 25°C) Diode forward voltage: -1V typ. - (VGS=0 V, I F=50 A,T j=25 °C) Reverse recovery time: 38ns typ. - (VR=-15 V, I F=|I S|,di F/dt =100 A/μs) Manufactured by: Infineon Part Number: 50P03L Full Datasheet: 50P03L

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