MG200Q1US51 200A 1200V IGBT GTR Module Silicon N Channel
Some images are stock photos close Manufacturer: Toshiba Part Number: MG200Q1US51 Amps: 200 Voltage: 1200	Price: $75.00 Sorry, we are currently sold out of 'MG200Q1US51 200A 1200V IGBT GTR Module Silicon N Channel'. Please check back later. Product code: DI048PD
	Quantity: First Class Mail Shipping Costs: Order Total Minimum Order Total Maximum USA First Class Shipping Rates Canada AirMail Shipping Rates International AirMail Shipping Rates $00.01 $15.00 $3.50 $5.50 $6.50 $15.01 $25.00 $5.50 $7.50 $8.50 $25.01 $35.00 $6.50 $8.50 $10.50 $35.01 $45.00 $8.50 $10.50 $12.50 $45.01 $55.00 $9.50 $11.50 $14.50 $55.01 $75.01 $11.50 $13.50 $18.50 $75.01 $100.00 $12.50 $17.50 $23.50 $100.01 $200.00 $14.50 $20.50 $28.50 $200.01 $300.00 $15.50 $23.50 $32.50 $300.01 $500.00 $17.50 $24.50 $37.50 $500.01 + $18.50 $25.50 $41.50* Priority Mail Shipping Costs: Order Total Minimum Order Total Maximum USA Priority Mail Shipping Rates Canada Priority Mail Shipping Rates International Priority Mail Shipping Rates $00.01 $15.00 $8.50 $12.50 $26.50 $15.01 $25.00 $10.50 $14.50 $28.50 $25.01 $35.00 $11.50 $16.50 $30.50 $35.01 $45.00 $12.50 $18.50 $32.50 $45.01 $55.00 $13.50 $20.50 $34.50 $55.01 $75.01 $14.50 $25.50 $38.50 $75.01 $100.00 $16.50 $28.50 $43.50 $100.01 $200.00 $18.50 $31.50 $48.50 $200.01 $300.00 $21.50 $38.50 $52.50 $300.01 $500.00 $24.50 $42.50 $57.50 $500.01 + $25.50 $52.50 $61.50* View shipping costs
Item Specifications and Additional Information: High Power IGBT Modules Max. Ratings: Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: ±20V Collector Current (DC)@ 25°C: 300A Forward Current: (DC): 200A Collector Power Dissipation: 1500W Junction Temperature: 150°C Isolation Voltage (AC 1 min.): 2500V Electrical Characteristics (@ 25°C): Gate Leakage Current (VGE=±20V, VCE=0): ±500nA max. Collector Cut-Off Current (VCE=1200V, VGE=0): 4.0mA max. Gate-Emitter Cut-Off Voltage (IC=200mA, VCE=5V): 3.0V min. ; 6.0V max. Collector-Emitter Saturation Voltage: 2.8V typ. ; 3.6V max. (IC=200A, VGE=15V, Tj=25°C) Input Capacitance (VCE=10V, VGE=0,f=1MHz): 24nF Switching Time: (Inductive Load VCC=600V, IC=200A, VGE=±15V, RG=4.7Ω) -Turn-on Time: 0.05µs typ. -Rise Time: 0.05µs typ. -Turn-on Time: 0.2µs typ. -Turn-off Delay Time: 0.5µs typ. -Fall Time: 0.1µs typ. ; 0.3µs max. -Turn-off Time: 0.6µs typ. Forward Voltage(IF=200A, VGE=0): 2.4V typ. ; 3.5V max Reverse Recovery Time: 0.15µs typ. ; 0.3µs max. (IF=200A, VGE=-10V, di/dt=700A/µs) Features: High input impedance High Speed Low saturation voltage Enhancement-mode Electrodes are isolated from case Applications: High Power Switching Motor Controls Manufactured by: Toshiba Part number: MG200Q1US51 Full datasheet: MG200Q1US51

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