MG50J2YS50 50A 600V IGBT GTR Module Silicon N Channel
Some images are stock photos close Manufacturer: Toshiba Part Number: MG50J2YS50 Amps: 50 Voltage: 600	Price: $68.00 1 available for immediate delivery Product code: DI049PD
	Quantity: First Class Mail Shipping Costs: Order Total Minimum Order Total Maximum USA First Class Shipping Rates Canada AirMail Shipping Rates International AirMail Shipping Rates $00.01 $15.00 $3.50 $5.50 $6.50 $15.01 $25.00 $5.50 $7.50 $8.50 $25.01 $35.00 $6.50 $8.50 $10.50 $35.01 $45.00 $8.50 $10.50 $12.50 $45.01 $55.00 $9.50 $11.50 $14.50 $55.01 $75.01 $11.50 $13.50 $18.50 $75.01 $100.00 $12.50 $17.50 $23.50 $100.01 $200.00 $14.50 $20.50 $28.50 $200.01 $300.00 $15.50 $23.50 $32.50 $300.01 $500.00 $17.50 $24.50 $37.50 $500.01 + $18.50 $25.50 $41.50* Priority Mail Shipping Costs: Order Total Minimum Order Total Maximum USA Priority Mail Shipping Rates Canada Priority Mail Shipping Rates International Priority Mail Shipping Rates $00.01 $15.00 $8.50 $12.50 $26.50 $15.01 $25.00 $10.50 $14.50 $28.50 $25.01 $35.00 $11.50 $16.50 $30.50 $35.01 $45.00 $12.50 $18.50 $32.50 $45.01 $55.00 $13.50 $20.50 $34.50 $55.01 $75.01 $14.50 $25.50 $38.50 $75.01 $100.00 $16.50 $28.50 $43.50 $100.01 $200.00 $18.50 $31.50 $48.50 $200.01 $300.00 $21.50 $38.50 $52.50 $300.01 $500.00 $24.50 $42.50 $57.50 $500.01 + $25.50 $52.50 $61.50* View shipping costs
Item Specifications and Additional Information: Half-Bridge IGBT Modules GTR Module Silicon N Channel Max. Ratings: (@ 25°C) Collector-Emitter Voltage: 600V Gate-Emitter Voltage: ±20V Collector Current (DC): 50A Forward Current (DC): 50A Collector Power Dissipation: 280W Junction Temperature: 150°C Isolation Voltage (AC 1 min.): 2500V Electrical Characteristics: Gate Leakage Current (VGE=±20V, VCE=0): ±500nA Collector Cut-Off Current (VCE=600V, VGE=0): 1.0mA Gate Emitter Cut-Off Voltage (IC-5mA, VCE=5V): 5V min ; 7V typ. ; 8V max. Collector-Emitter Saturation Voltage (IC=50A, VGE=15V): 2.10V typ. ; 2.70V max. Input Capacitance (VCE=10V, VGE=0, f=1MHz: 4950pF Switching Time: (Inductive Load VCC=300V, IC=50A, VGE=±15V, RG=24Ω) -Turn-on Delay Time: .08µs typ. ; .16µs max. -Rise time: .12µs typ. ; .24µs max. -Turn-on Time: .40µs typ. ; .80µs max. -Turn-off Delay Time: .20µs typ. ; .40µs max. -Fall Time: .15µs typ. ; .30µs max. -Turn-off Time: .50µs typ. ; 1.0µs max. Forward Voltage (IF=50A, VGE=0): 2.3V typ. ; 3.0V max. Reverse Recovery Time: .08µs typ. ; .15µs max. (IF=50A, VGE=-10V, di/dt=100A/µs) Features: Electrodes isolated from case High input impedence Complete Half Bridge in one package Enhancement-Mode High Speed Low saturation Voltage Applications: High Speed Switching Motor Control Manufactured by: Toshiba Part number: MG50J2YS50 Full datasheet: MG50J2YS50

Related Item(s)

Name	Price	Availability
GA300TD60U 300A 600V IGBT Half-Bridge Dual Int-A-Pak	$205.00	In Stock