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MURS205T3G 2A 2Amp 50V Ultrafast SMT Power Rectifier Diode

MURS205T3G 2A 2Amp 50V Ultrafast SMT Power Rectifier Diode

Manufacturer: On Semiconductor
Part Number: MURS205T3G
Amps: 2
Voltage: 50
Lead/Terminal Type: Surface Mount

Price: $0.11
628 available for immediate delivery
Code: DI096PD
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Additional Information


Surface Mount Ultrafast Power Rectifier Diodes
SMB-Case 403A Package
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant
Leads:
- Terminal Leads are Readily Solderable
- Surface Temperature for soldering: 260°C max for 10s
Polarity: Band Indicates Cathode Lead

Maximum Ratings:
Peak Repetitive Reverse Voltage: 50V
Working Peak Reverse Voltage: 50V
DC Blocking Voltage: 50V
Average Rectified Forward Current:
- 1.0A @ TL = 150°C
- 2.0A @ TL = 125°C
Non–Repetitive Peak Surge Current: 50A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature: -60°C to 175°C

Thermal Characteristics (TL = 25°C):
Thermal Resistance, Junction to Lead: 13°C/W

Typical Electrical Characteristics:
Maximum Instantaneous Forward Voltage:
(Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%)
- iF = 2A, TJ = 25°C : 0.94V
- iF = 2A, TJ = 150°C: 0.74V
Maximum Instantaneous Reverse Current:
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%)
- Rated dc Voltage, TJ = 25°C : 2.0µA
- Rated dc Voltage, TJ = 150°C : 50µA
Maximum Reverse Recovery Time:
- iF = 1.0 A, di/dt = 50 A/µs : 30ns
- iF = 0.5 A, iR = 1.0 A, IR to 0.25 A: 20ns
Maximum Forward Recovery Time:
- iF = 1.0 A, di/dt = 100 A/us, Rec. to 1.0 V : 20ns

Features:
Small Compact Surface Mountable Package with J−Bend Leads
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.74 V Max @ 2.0 A, TJ = 150°C)

Manufactured by: ON Semiconductor
Part Number: MURS205T3G

Full Datasheet: MURS205T3G

RoHS Compliant