Item Specifications and Additional Information:
Bipolar Amplifier Transistors
Marking on Part: G42 2N5551
Preformed/Bent Leads
We are unable to determine the manufacturer of this the part. The following information
has been compiled after comparing and matching specifications from several datasheets from a
number of different manufacturers. We are supplying this information for reference only.
OFF Characteristics:
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0): 160V min.
Collector-Base Breakdown Voltage (IC = 100 uAdc, IE = 0 ): 180V min.
Emitter-Base Breakdown Voltage (IE = 10 uAdc, IC = 0): 6.0V min.
Collector Cutoff Current (VCB = 120 Vdc, IE = 0): 50nA max.
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0): 50nA max.
ON Characteristics:
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc): 80 min.
Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc): .20V max.
Base-Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc): 1.0V max.
SMALL SIGNAL Characteristics:
Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz): 100MHz min. ; 300MHz max.
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz): 6.0pF max.
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz): 20pF max.
Small-Signal Current Gain ((IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz): 50 min. ; 200 max.
Noise Figure (IC = 250 uAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz): 8.0dB max.
Part Number: 2N5551
For reference only, we are providing a datasheet for this part number, please note
that we do not know the manufacturer of the part we have in stock. West Florida Components
assumes no liability for this information.
ON Semiconductor Datasheet: 2N5551 |
