IRLR3103TR 55A 30V N Channel MosFET International Rectifier
Some images are stock photos close Manufacturer: International Rectifier Part Number: IRLR3103TR Amps: 55 Voltage: 30 Package: DPAK Lead/Terminal Type: Surface Mount Number Leads/Terminals: 3	Price: $1.15 Shipping Weight: 0.01 ounces 1954 available for immediate delivery Product code: G443APF05
	Volume Pricing Quantity Price Each 1-9 $1.15 10-99 $1.00 100-499 $0.85 500+ $0.70
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Item Specifications and Additional Information: HEXFET® Power MosFETs N-Channel Features: - Logic-Level Gate Drive - Ultra Low On-Resistance - Advanced Process Technology - Fast Switching - Fully Avalanche Rated Electrical Characteristics (TJ=25°C unless otherwise noted): Drain-to-Source Breakdown Voltage (VGS = 0V, ID = 250uA): 30V min. Static Drain-to-Source On-Resistance (VGS = 10V, ID = 33A): 0.019Ω max. Forward Transconductance (VDS = 25V, ID = 34A): 23S min. Drain-to-Source Leakage Current (VDS = 30V, VGS = 0V): 25uA max. Gate-to-Source Forward Leakage (VGS = 16V): 100nA max. Total Gate Charge (ID = 34A, VDS = 24V, VGS = 4.5V): 50nC max. Input Capacitance (VGS = 0V, VDS = 25V, f = 1.0MHz): 1600pFtyp. Source-Drain Ratings/Characteristics: Continuous Source Current (Body Diode): 55A max. Diode Forward Voltage (TJ = 25°C, IS = 28A, VGS = 0V): 1.3V max. Reverse Recovery Time (TJ = 25°C, IF = 34A, di/dt = 100A/μs): 81ns typ. Reverse Recovery Charge (TJ = 25°C, IF = 34A, di/dt = 100A/μs): 210nC Manufactured by: International Rectifier Part Number: IRLR3103TR Full Datasheet: International Rectifier MosFET IRLR3103TR

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