H11B1 Photon Coupled Isolator IC GE
Some images are stock photos close Manufacturer: General Electric Part Number: H11B1	Price: $0.75 Shipping Weight: 0.02 ounces 90 available for immediate delivery Product code: IC446PE01
	Volume Pricing Quantity Price Each 1-9 $0.75 10+ $0.65
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Item Specifications and Additional Information: Photon Coupled Isolators Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier MAXIMUM RATINGS @ 25°C: Infrared Emitting Diode: - Power Dissipation: 100mW - Derate 1.33mW/°C above TA 25°C - Forward Current (Continuous): 60mA - Forward Current (Peak): 3A (Pulse Width 1us 300P Ps) - Reverse Voltage: 3V Photo-Darlington: - Power Dissipation: 150mW - Derate 2.0mW/°C above TA 25°C - VCEO: 25V - VCBO: 30V - VECO: 7.0V - Collector Current (Continuous): 100mA INDIVIDUAL ELECTRICAL CHARACTERISTICS @ 25°C Infrared Emitting Diode: - Forward Voltage (IF=10mA): 1.1V typ. - Reverse Current (VR=3V): 10 microamps max. - Capacitance (V=O,f=1MHz): 50pF typ. Photo Transistor Breakdown Voltage V(BR)CEO (IC=10mA, IF=0): 25V min. Breakdown Voltage V(BR)CBO (IC=100uA, IF=0): 30V min. Breakdown Voltage V(BR)EBO (IC=100uA, IF=0): 7V min. Collector Dark Current ICEO (VCE=10V, IF=0): 5nA typ. Capacitance (VCE=10V, f=1MHz): 6pF typ. COUPLED ELECTRICAL CHARACTERISTICS: DC Current Transfer Ratio(IF=1mA, VCE=5V): 500% min. Saturation Voltage-Collector to Emitter(IF=1mA, IC=1mA): 0.7V typ. Isolation Resistance(Input to Output Voltage=500Vdc): 100GΩ Input to Output Capacitance (Input to Output Voltage=O,f=1MHz): 2pF max. Manufactured by: General Electric Part Number: H11B1 Full Datasheet: H11B1

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