MMBF4416LT1G 30V JFET Amplifier Transistor ON Semi
Some images are stock photos close Manufacturer: On Semiconductor Part Number: MMBF4416LT1G Voltage: 30 Package: SOT-23 Lead/Terminal Type: Surface Mount Number Leads/Terminals: 3	Price: $0.24 Shipping Weight: 0.01 ounces 1900 available for immediate delivery Product code: IC516PE04
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Item Specifications and Additional Information: JFET Amplifier Transistor VHF/UHF N-Channel Description / Additional Information Maximum Ratings Drain-Source Voltage: 30V Drain-Gate Voltage: 30V Gate-Source Voltage: 30V Gate Current: 10mA Thermal Characteristics Total Device Dissipation FR-5 Board,TA=25°C: 225mW Derate above 25°C: 1.8mW/°C Thermal Resistance, Junction-to-Ambient: 556°C/W Junction and Storage Temperature: -55°C to 150°C OFF Characteristics: Gate-Source Breakdown Voltage (IG = 1.0 uAdc, VDS = 0): 30V min. Gate Reverse Current (VGS = 20 Vdc, VDS = 0): 1.0nA max. Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc): -6.0V max. Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc): -5.5V max. ON Characteristics: Zero-Gate-Voltage Drain Current (VGS = 15 Vdc, VGS = 0): 15mA max. Gate-Source Forward Voltage (IG = 1.0 mAdc, VDS = 0): 1.0V max. Small-Signal Characteristics: Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz): 7500umhos max. Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz): 50umhos max. Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz): 4.0pF max. Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz): 0.8pF max. Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz): 2.0pF max. Manufactured by: ON Semiconductor Part Number: MMBF4416LT1G Full Datasheet: MMBF4416LT1G

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