Item Specifications and Additional Information:
NPN Darlington Power Transistors
PNP Complement is BDX66A
The BDX67A is an NPN epitaxial base transistors in monolithic Darlington
circuit for audio output stages and general amplifier and switching applications.
Collector-emitter voltage (open base): 80V
Collector-base voltage (open emitter): 100V
Emitter-base voltage (open collector): 5V
Collector current: 16A
Collector current (peak): 20A
Base current: 250mA
Total power dissipation at Tmb= 25°C: 150W
Maximum junction temperature: 200°C
Storage junction temperature: -65°C to 200°C
Thermal resistance, junction to mounting base: 1.17K/W
Electrical Characteristics (TJ=25°C unless otherwise noted):
Collector cut-off current (IE = 0, VCB = VCEO max): 1.0mA max.
Collector cut-off current (IB = 0, VCE = 1/2 VCEO max): 1.0mA max.
Emitter cut-off current (IC = 0, VEB = 5V): 5.0mA max.
D.C. current gain (IC =1A, VCE = 3V): 5200 typ.
Base-emitter voltage (IC = 10A, VCE = 3V): 2.5V max.
Collector-emitter saturation voltage (IC = 10A, IB = 40mA): 2.0V max.
Collector capacitance (IE = Ie = 0, VCB = 10V f = 1MHz): 300pF typ.
Cut-off frequency (IC = 5A, VCE = 3V): 50kHz typ.
Small signal current gain (IC = 5A, VCE = 3V, f = 1MHz): 20V typ.
Diode, forward voltage (IF = 10A): 2.5V typ.
Manufactured by: SML
Part Number: BDX67A
For reference only, we are providing a datasheet for this part number, please note
it may be from a different manufacturer. West Florida Components assumes no liability for this information.
Full Datasheet: SML BDX67A Darlington Power Transistor