2N6806 JANTX2N6806 HEXFET Power MOSFET Transistor Military International Rectifier
Some images are stock photos close Manufacturer: International Rectifier Part Number: JANTX2N6806 Voltage: 200 Package: TO-3 Lead/Terminal Type: Through Hole Number Leads/Terminals: 2 Military Spec: Yes	Price: $50.00 Shipping Weight: 0.42 ounces 3 available for immediate delivery Product code: IC648APH01
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Item Specifications and Additional Information: HEXFET® Power MOSFET Transistors Military P-Channel Features: - Repetitive Avalanche Ratings - Dynamic dv/dt Rating - Hermetically Sealed - Simple Drive Requirements - Ease of Paralleling Electrical Characteristics (TJ=25°C unless otherwise noted): Drain-to-Source Breakdown Voltage (VGS = 0V, ID = -1.0mA): -200V min. Static Drain-to-Source On-State Resistance (VGS =-10V, ID =-4.0A): 0.80Ω max. Gate Threshold Voltage (VDS = VGS, ID =-250uA): -2.0V to -4.0V Zero Gate Voltage Drain Current (VDS=-160V, VGS=0V): -25uA max. Gate-to-Source Leakage Forward (VGS =-20V): -100nA max. Gate-to-Source Leakage Reverse (VGS =-20V): 100nA max. Rise Time: 100ns max. Fall Time: 80ns max. Input Capacitance (VGS = 0V, VDS =25V, f = 1.0MHz): 700pF max. Output Capacitance (VGS = 0V, VDS =25V, f = 1.0MHz): 200pF max. Source-Drain Diode Ratings and Characteristics Continuous Source Current (Body Diode): -6.5A max. Diode Forward Voltage (Tj = 25°C, IS =-6.5A, VGS = 0V): -6.0V max. Reverse Recovery Time (Tj = 25°C, IF =-6.5A, di/dt ≤ -100A/us, VDD ≤ -50V): 400ns max. Reverse Recovery Charge (Tj = 25°C, IF =-6.5A, di/dt ≤ -100A/us, VDD ≤ -50V): 4.0uc max. Applications: - Switching Power Supplies - Motor Controls - Inverters - Choppers - Audio Amplifiers - High Energy Pulse Circuits Manufactured by: International Rectifier Part Number: JANTX2N6806 Full Datasheet: International Rectifier HEXFET® Transistor 2N6806

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