IRF9530N HEXFET Power MOSFET Transistor International Rectifier
Some images are stock photos close Manufacturer: International Rectifier Part Number: IRF9530N Package: TO-220AB Number Leads/Terminals: 3	Price: $0.50 Shipping Weight: 0.07 ounces 11 available for immediate delivery Product code: IC655APH01
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Item Specifications and Additional Information: HEXFET® Power MOSFET Transistors P-Channel Features - Advanced Process Technology - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - Fully Avalanche Rated Electrical Characteristics (TJ=25°C unless otherwise noted): Drain-to-Source Breakdown Voltage (VGS = 0V, ID = -250uA): -100V min. Static Drain-to-Source On-Resistance (VGS = -10V, ID = -8.4A): 0.20Ω max. Forward Transconductance (VDS = -50V, ID = -8.4A): 3.2S min. Drain-to-Source Leakage Current (VDS = -80V, VGS = 0V, TJ = 150°C): -250uA max. Total Gate Charge (ID = -8.4A, VDS = -80V, VGS = -10V): 58nC max. Gate-to-Source Charge (ID = -8.4A, VDS = -80V VGS = -10V): 8.3nC max. Gate-to-Drain ("Miller") Charge(ID = -8.4A, VDS = -80V, VGS = -10V): 32nC Turn-On Delay Time (VDD = -50V, ID = -8.4A, RG = 9.1Ω, RD = 6.2Ω): 15ns typ. Turn-Off Delay Time (VDD = -50V, ID = -8.4A, RG = 9.1Ω, RD = 6.2Ω): 45ns typ. Internal Drain Inductance (Between lead,6mm (0.25in.)from package and center of die contact): 4.5nH typ. Internal Source Inductance (Between lead,6mm (0.25in.)from package and center of die contact): 7.5nH typ. Source-Drain Ratings and Characteristics Continuous Source Current (Body Diode): -14A max. Pulsed Source Current (Body Diode): -56A max. Diode Forward Voltage (TJ = 25°C, IS = -8.4A, VGS = 0V): -1.6V max. Manufactured by: International Rectifier Part Number: IRF9530N Full Datasheet: MosFET Transistors IRF9530N International Rectifier

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