Item Specifications and Additional Information:
HEXFET® Power MOSFET Transistors
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
Electrical Characteristics (TJ=25°C unless otherwise noted):
Drain-to-Source Breakdown Voltage (VGS = 0V, ID = -250uA): -100V min.
Static Drain-to-Source On-Resistance (VGS = -10V, ID = -8.4A): 0.20Ω max.
Forward Transconductance (VDS = -50V, ID = -8.4A): 3.2S min.
Drain-to-Source Leakage Current (VDS = -80V, VGS = 0V, TJ = 150°C): -250uA max.
Total Gate Charge (ID = -8.4A, VDS = -80V, VGS = -10V): 58nC max.
Gate-to-Source Charge (ID = -8.4A, VDS = -80V VGS = -10V): 8.3nC max.
Gate-to-Drain ("Miller") Charge(ID = -8.4A, VDS = -80V, VGS = -10V): 32nC
Turn-On Delay Time (VDD = -50V, ID = -8.4A, RG = 9.1Ω, RD = 6.2Ω): 15ns typ.
Turn-Off Delay Time (VDD = -50V, ID = -8.4A, RG = 9.1Ω, RD = 6.2Ω): 45ns typ.
Internal Drain Inductance (Between lead,6mm (0.25in.)from package and center of die contact): 4.5nH typ.
Internal Source Inductance (Between lead,6mm (0.25in.)from package and center of die contact): 7.5nH typ.
Source-Drain Ratings and Characteristics
Continuous Source Current (Body Diode): -14A max.
Pulsed Source Current (Body Diode): -56A max.
Diode Forward Voltage (TJ = 25°C, IS = -8.4A, VGS = 0V): -1.6V max.
Manufactured by: International Rectifier
Part Number: IRF9530N
Full Datasheet: MosFET Transistors IRF9530N International Rectifier