IRLL110 1.5A Power MosFET Transistor International Rectifier
Some images are stock photos close Manufacturer: International Rectifier Part Number: IRLL110 Amps: 1.5 Voltage: 100 Package: SOT223 Lead/Terminal Type: Surface Mount Number Leads/Terminals: 3	Price: $3.00 Shipping Weight: 0.01 ounces 130 available for immediate delivery Product code: IC680APH02
	Volume Pricing Quantity Price Each 1-9 $3.00 10-99 $2.75 100+ $2.50
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Item Specifications and Additional Information: HexFET Power MosFET Transistors Features: - Dynamic dv/dt Rating - Repetitive Avalanche Rated - Logic-Level Gate Drive - RDS(on) Specified @ VGS = 4V & 5V - Fast Switching Maximum Ratings Continuous Drain Current, VGS @ 5.0V (ID @ TC=25°C): 1.5A Power Dissipation (PD @ TC = 25°C): 3.1W Gate-to-Source Voltage: ±10V Single Pulse Avalanche Energy: 50mJ Peak Diode Recovery dv/dt: 5.5V/ns Electrical Characteristics (TJ=25°C unless otherwise noted): Drain-to-Source Breakdown Voltage (VGS = 0V, ID = 250uA): 100V min. Static Drain-to-Source On-Resistance - (VGS = 5.0V, ID = 0.90A): 0.54Ω max. - (VGS = 4.0V, ID = 0.75A): 0.76Ω max. Forward Transconductance (VDS = 25V, ID = 0.90A): 0.57S min. Gate-to-Source Forward Leakage (VGS = 10V): 100nA max. Charges (ID = 5.6A, VDS = 80V, VGS = 5.0V): - Total Gate Charge: 6.1nC max. - Gate-to-Source Charge: 2.6nC max. - Gate-to-Drain("Miller") Charge: 3.3nC max. Rise Time (VDD = 50V, ID = 5.6A, RG = 12Ω, RD = 8.4Ω): 47ns typ. Fall Time (VDD = 50V, ID = 5.6A, RG = 12Ω, RD = 8.4Ω): 18ns typ. Manufactured by: International Rectifier Part Number: IRLL110 Full Datasheet: HexFET MosFET Transistors IRLL110

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