BF998 Dual Gate Mosfet Transistor Philips
Some images are stock photos close Manufacturer: Philips Part Number: BF998 Package: SOT143 Lead/Terminal Type: Surface Mount Number Leads/Terminals: 4	Price: $0.50 Shipping Weight: 0.01 ounces 1990 available for immediate delivery Product code: J307APF08
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Item Specifications and Additional Information: Dual Gate MosFET Transistors Silicon N-Channel Features: - Short channel transistor with high forward transfer admittance to input capacitance ratio - Low noise gain controlled amplifier up to 1 GHz. Drain-Source Voltage: 12.0V max. Drain Current: 30mA max. Total Power Dissipation: 200mW max. Forward Transfer Admittance: 24mS typ. Input Capacitance @ Gate 1: 2.1pF typ.. Reverse Transfer Capacitance (f = 1MHz): 25pF typ. Noise Figure (f = 800MHz): 1.0dB typ. Operating Junction Temperature: 150°C max. Static Characteristics (Tj = 25°C unless otherwise specified) Gate 1-Source Breakdown Voltage (VG2-S = VDS = 0; IG1-SS = ±10 mA): 6.0V min. ; 20.0V max. Gate 2-Source Breakdown Voltage (VG1-S = VDS = 0; IG2-SS = ±10 mA): 6.0V min. ; 20.0V max. Gate 1-Source Cut-Off Voltage (VG2-S = 4.0V; VDS = 8.0V; ID = 20uA): 2.0V max. Gate 2-Source Cut-Off Voltage (VG1-S = 0; VDS = 8.0V; ID = 20uA): 1.5V max. Gate 1 Cut-Off Current (VG2-S = VDS = 0; VG1-S = ±5 V): 50nA max. Gate 2 Cut-Off Current (VG1-S = VDS = 0; VG2-S = ±5 V): 50nA max. Applications: VHF and UHF applications with 12 V supply voltage - Television Tuners - Professional Communications Equipment Manufactured by: Philips Part Number: BF998 Full Datasheet: Philips Mosfet BF998

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