Item Specifications and Additional Information:
N-Channel Power MosFET Transistors
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V-5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Features:
- Temperature Compensating PSPICE® Model
- Can be Driven Directly from CMOS, NMOS, and TTL Circuits
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
Electrical Characteristics (TC=25°C unless otherwise noted):
Drain to Source Breakdown Voltage (ID = 250uA, VGS = 0V): 50V min.
Zero Gate Voltage Drain Current (VDS = 40V, VGS = 0V): 1.0uA max.
Gate to Source Leakage Current (VGS = ±10V): ±100nA
Drain to Source On Resistance (ID = 14A, VGS = 5V): 0.100Ω
Turn-On Time (VDD = 25V, ID = 7A,RL = 3.57Ω, VGS = 5V, RGS = 0.6Ω): 60ns typ..
Rise Time (VDD = 25V, ID = 7A,RL = 3.57Ω, VGS = 5V, RGS = 0.6Ω): 24ns typ.
Fall Time VDD = 25V, ID = 7A,RL = 3.57Ω, VGS = 5V, RGS = 0.6Ω): 16ns typ.
Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz): 670pF typ.
Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz): 185pF typ.
Applications:
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
Manufactured by: Fairchild
Part Number: RFD14N05L
Full Datasheet: Fairchild N-Channel MosFET RFD14N05L |