SRM20100LM10 SRAM SMT CMOS IC Epson
Some images are stock photos close Manufacturer: Epson Part Number: SRM20100LM10 Package: SOP6-32 Lead/Terminal Type: Surface Mount Number Leads/Terminals: 32	Price: $15.00 Shipping Weight: 0.05 ounces 32 available for immediate delivery Product code: J332APF07
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Item Specifications and Additional Information: Static RAM CMOS ICs The SRM20100LM10 is a 131,072 word x 8-Bit asynchronous static, random access memory on a monolithic CMOS chip. The very low standby power requirements make it perfect for applications Features: - Fast Access Time - Low Supply Current - Completely Static - Single Power Supply - TTL Compatible Inputs and Outputs - 3-State Output with Wired-OR Capability - Non-volatile Storage with Back-up Batteries DC Operating Conditions (VSS = 0V, TA = 0 to 70°C) Supply Voltage (VDD): 4.5V to 5.5V Input Voltage: VIH = 3.5V typ. ; VIL = -0.3V to 0.8V Electrical Characteristics (VDD = 5V ± 10%, VSS = 0V, TA = 0 to 70°C): Input Leakage (VI = 0 to VDD): -1uA to 1uA Standby Supply Current (IDDS)(CSI =VIH or CS2 = VIL): 1.0mA typ. Average Operating Current (IDDA) (VI =VIL, VIH, I I/O = 0mA, tcyc=min): 15mA typ. High Level Output Voltage (IOH = 1.0mA): 2.4V min. Low Level Output Voltage (IOL = 2.1mA): 0.4V max. Terminal Capacitance (f =1MHz, TA = 25°C) Address Capacitance (VADD = 0V): 8.0pF max. Input Capacitance (VI = 0V): 10pF max. I/O Capacitance (VI/O = 0V): 10pF max. AC Electrical Characteristics (VDD = 5V±10%, VSS = 0V, TA = 0 ot 70°C) READ CYCLE Read Cycle Time: 100ns min. Address Access Time: 100ns max. Output Hold Time: 10ns min. WRITE CYCLE Write Cycle Time: 100ns min. Address Enable Time: 80ns min. Write Pulse Width: 75ns min. Input Data Setup Time: 40ns min. Manufactured by: Epson Part Number: SRM20100LM10 Full Datasheet: Epson SRM20100LM10

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