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SRM20100LM10 SRAM SMT CMOS IC Epson

SRM20100LM10 SRAM SMT CMOS IC Epson

Manufacturer: Epson
Part Number: SRM20100LM10
Package: SOP6-32
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 32

Price: $15.00
32 available for immediate delivery
Code: J332APF07
Weight: 0.05oz ONZ
Quantity:

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Additional Information

Static RAM CMOS ICs

The SRM20100LM10 is a 131,072 word x 8-Bit asynchronous static, random access memory on a monolithic CMOS chip. The very low standby power requirements make it perfect for applications

Features:
- Fast Access Time
- Low Supply Current
- Completely Static
- Single Power Supply
- TTL Compatible Inputs and Outputs
- 3-State Output with Wired-OR Capability
- Non-volatile Storage with Back-up Batteries

DC Operating Conditions (VSS = 0V, TA = 0 to 70°C)
Supply Voltage (VDD): 4.5V to 5.5V
Input Voltage: VIH = 3.5V typ. ; VIL = -0.3V to 0.8V

Electrical Characteristics (VDD = 5V ± 10%, VSS = 0V, TA = 0 to 70°C):
Input Leakage (VI = 0 to VDD): -1uA to 1uA
Standby Supply Current (IDDS)(CSI =VIH or CS2 = VIL): 1.0mA typ.
Average Operating Current (IDDA) (VI =VIL, VIH, I I/O = 0mA, tcyc=min): 15mA typ.
High Level Output Voltage (IOH = 1.0mA): 2.4V min.
Low Level Output Voltage (IOL = 2.1mA): 0.4V max.

Terminal Capacitance (f =1MHz, TA = 25°C)
Address Capacitance (VADD = 0V): 8.0pF max.
Input Capacitance (VI = 0V): 10pF max.
I/O Capacitance (VI/O = 0V): 10pF max.

AC Electrical Characteristics (VDD = 5V±10%, VSS = 0V, TA = 0 ot 70°C)
READ CYCLE
Read Cycle Time: 100ns min.
Address Access Time: 100ns max.
Output Hold Time: 10ns min.

WRITE CYCLE
Write Cycle Time: 100ns min.
Address Enable Time: 80ns min.
Write Pulse Width: 75ns min.
Input Data Setup Time: 40ns min.

Manufactured by: Epson
Part Number: SRM20100LM10

Full Datasheet: Epson SRM20100LM10