Item Specifications and Additional Information:
High Voltage NPN Silicon Transistors
TO-92 Package
Max. Ratings:
Collector-Emitter Voltage: 300V
Collector-Base Voltage: 300V
Emitter-Base Voltage: 6V
Collector Current 500mA
Total Device Dissipation @ TA = 25°C: 625mW
Derate above 25°C: 12mW/°C
Operating & Storage Junction Temperature Range: -55°C to 150°C
Thermal Characteristics:
Thermal Resistance, Junction to Ambient: 200°C/w
Thermal Resistance, Junction to Case: 83.3°C/W
Electrical Characteristics OFF (TA=25°C unless otherwise noted):
Collector-Emitter Breakdown Voltage: 300v min.
(Pulse Width ≤300 µs, Duty Cycle ≤2.0%., IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage: 300V min.
(IC = 100 µAdc, IE = 0)
Emitter-Base Breakdown Voltage: 6V min.
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current: 0.1µA max.
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current: 0.1µA max.
(VEB = 6.0 Vdc, IC = 0)
Electrical Characteristics ON(TA=25°C unless otherwise noted):
DC Current Gain: 25 min.
(IC = 1.0 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage: 0.5V
(IC = 20 mAdc, IB = 2.0 mAdc)
Base-Emitter Saturation Voltage: 0.9V
(IC = 20 mAdc, IB = 2.0 mAdc)
Small Signal Characteristics:
Current-Gain Bandwidth Product: 50MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance: 3pF
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Manufactured by: Motorola (ON)
Part number: MPSA42
Full datasheet: MPSA42 |
