2N3716 JANTX2N3716 4A 80V Military Transistor
Some images are stock photos close Manufacturer: Microsemi Part Number: JANTX2N3716 Amps: 4a Voltage: 80V Package: TO-3 Lead/Terminal Type: Radial Number Leads/Terminals: 2 Material: Silicon	Price: $225.75 7 available for immediate delivery Product code: T458PD
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Item Specifications and Additional Information: Military Power Transistors Qualified per MIL-PRF-19500/408 NPN Maximum Ratings: Collector-Emitter Voltage: 80V Collector-Base Voltage: 100V Emitter-Base Voltage: 7.0V Base Current: 4.0A Collector Current: 10A Total Power Dissipation: - TA=25°C: 5.0W - TC=100°C: 85.7W - Derate linearly 28.57 mW/°C for TA >25°C - Derate linearly 0.857 W/°C for TC >100°C Operating & Storage Junction Temperature: -65°C to 200°C Thermal Resistance, Junction-to-Case: 1.17°C/W Electrical Characteristics OFF (TC=25°C unless otherwise noted): Collector-Emitter Breakdown Current @ IC=10mA: 80V min. Collector-Base Cutoff Current @ VCB=100V: 10µA max. Emitter-Base Breakdown Voltage @ VEB=7V: 1mA max. Collector-Emitter Cutoff Current @ VBE=1.5V, VCE=80V: 1.0mA max. Electrical Characteristics ON - (Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.) Forward-Current Transfer Ratio: - IC = 1.0 Adc, VCE = 2.0 Vdc: 50 min , 150 max - IC = 3.0 Adc, VCE = 2.0 Vdc: 30 min , 120 max - IC = 5.0 Adc, VCE = 2.0 Vdc: 10 min - IC = 10 Adc, VCE = 4.0 Vdc: 5 min. Collector-Emitter Saturation Voltage: - IC = 5.0 Adc, IB = 0.5 Adc: 1.0V max - IC = 10 Adc, IB = 2.0 Adc: 2.5V max Base-Emitter Saturation Voltage: - IC = 5.0 Adc, IB = 0.5 Adc: 1.5V - IC = 10 Adc, IB = 2.0 Adc: 3.0V Manufactured by: Silicon Transistor Corp. (Microsemi) Part Number: JANTX 2N3716 Full Datasheet: JANTX 2N3716

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