Item Specifications and Additional Information:
Military Power Transistors
Qualified per MIL-PRF-19500/509
NPN
Gold Plated Leads
Maximum Ratings:
Collector-Emitter Voltage: 150V
Collector-Base Voltage: 180V
Emitter-Base Voltage: 6.0V
Base Current: 10A
Collector Current: 25A
Total Power Dissipation: TA=25°C: 200W , TC=100°C: 112W
- Derate linearly 1.14 W/°C for TC=25°C & TC=200°C
Operating & Storage Junction Temperature: -65°C to 175°C
Thermal Resistance, Junction-to-Case: 1.875°C/W
Electrical Characteristics OFF (TC=25°C unless otherwise noted):
Collector-Emitter Breakdown Voltage @ IC=50mA: 150V min.
Collector-Emitter Cutoff Current @ VCE=75V: 50µA
Collector-Emitter Cutoff Current @ VCE=150V, VBE=1.5V: 10µA
Emitter-Base Cutoff Current @ VEB=6V: 100µA
Collector-Base Cutoff Current @ VCB=180V: 10µA
Electrical Characteristics ON
- (Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.)
Forward-Current Transfer Ratio:
- IC = 0.5 Adc, VCE = 2.0 Vdc: 40 min.
- IC = 10 Adc, VCE = 2.0 Vdc: 30 min. , 120 max.
- IC = 25 Adc, VCE = 2.0 Vdc : 12 min.
Collector-Emitter Saturation Voltage:
- IC = 10 Adc, IB = 1.0 Adc: 1V max.
- IC = 25 Adc, IB = 2.5 Adc: 1.8V max.
Base-Emitter Saturation Voltage;
-IC = 10 Adc, IB = 1.0 Adc: 1.8V max.
Manufactured by: Silicon Transistor Corp. (Microsemi)
Part Number: JANTX2N6341
Full Datasheet: JANTX2N6341 |