Item Specifications and Additional Information:
High Voltage Power Transistors
NPN Silicon
DESCRIPTION / ADDITIONAL INFORMATION
OFF Electrical Characteristics (TC=25°C unless otherwise noted)
Collector-Emitter Sustaining Voltage (IC=30MA, IB=0): 300V min.
Collector Cutoff Current (VCE=200V, IB=0): 1.0mA max.
Emitter Cutoff Current (VBE=5V, IC=0): 1.0mA max.
ON Electrical Characteristics
DC Current Gain (IC=0.3A, VCE=10V): 30 typ.
Collector-Emitter Saturation Voltage (IC=1.0A, IB=0.2A): 1.0V max.
Base-Emitter On Voltage (IC=0.1A, VCE=10V): 1.5V max.
DYNAMIC Characteristics
Current-Gain-Bandwidth Product: 10 MHz min.
(IC=0.1A, VCE=10V, f=2.0MHz)
Small-Signal Current Gain: 25MHz
(IC=0.2A, VCE=10V, f=1.0kHz)
Full Datasheet: TIP48 |