IRF9520 -6.8A -100V HexFET Power MosFET International Rectifier
Some images are stock photos close Manufacturer: International Rectifier Part Number: IRF9520 Amps: -6.8A Voltage: -100V Package: TO-220 Lead/Terminal Type: Radial Number Leads/Terminals: 3	Price: $1.25 120 available for immediate delivery Product code: T495PE02
	Volume Pricing Quantity Price Each 1-9 $1.25 10-99 $1.10 100+ $0.95
	Quantity: First Class Mail Shipping Costs: Order Total Minimum Order Total Maximum USA First Class Shipping Rates $00.01 $15.00 $3.50 $15.01 $25.00 $5.50 $25.01 $35.00 $6.50 $35.01 $45.00 $8.50 $45.01 $55.00 $9.50 $55.01 $75.01 $11.50 $75.01 $100.00 $12.50 $100.01 $200.00 $14.50 $200.01 $300.00 $15.50 $300.01 $500.00 $17.50 $500.01 + $18.50 Priority Mail Shipping Costs: Order Total Minimum Order Total Maximum USA Priority Mail Shipping Rates $00.01 $15.00 $8.50 $15.01 $25.00 $10.50 $25.01 $35.00 $11.50 $35.01 $45.00 $12.50 $45.01 $55.00 $13.50 $55.01 $75.01 $14.50 $75.01 $100.00 $16.50 $100.01 $200.00 $18.50 $200.01 $300.00 $21.50 $300.01 $500.00 $24.50 $500.01 + $25.50 View shipping costs
Item Specifications and Additional Information: HexFET® Power MosFET DESCRIPTION / ADDITIONAL INFORMATION Features: - Dynamic dv/dt Rating - Repetitive Avalanche Rated - P-Channel - Fast Switching - Ease of Paralleling - Simple Drive Requirements TYPICAL ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted): Drain-to-Source Breakdown Voltage: -100V min. - (VGS = 0V, ID = -250uA) Breakdown Voltage Temp. Coefficient: -0.10V/°C typ. - (Reference to 25°C, ID = -1mA) Static Drain-to-Source On-Resistance: 0.60Ω max. - (VGS = -10V, ID = -4.1A) Drain-to-Source Leakage Current: -100uA (max) - (VDS = -100V, VGS = 0V) Gate-to-Source Forward Leakage (VGS = -20V): -100nA (max) Total Gate Charge (ID =-6.8A): 18nC max. Internal Drain Inductance: 4.5nH Full Datasheet: IRF9520

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