TC551001CFI-85L 8 Bit SRAM CMOS IC SMT Toshiba
Some images are stock photos close Manufacturer: Toshiba Part Number: TC551001CFI-85L Package: SOIC Lead/Terminal Type: Surface Mount Number Leads/Terminals: 32	Price: $11.85 Shipping Weight: 0.04 ounces 51 available for immediate delivery Product code: T610APF11
	Volume Pricing Quantity Price Each 1-9 $11.85 10+ $11.00
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Item Specifications and Additional Information: Surface Mount SRAM CMOS ICs The TC551001CFI-85L is a 1,048,576-bit SRAM organized a 131,072 words by 8 bits. It is constructed by using Toshiba's CMOS Silicon gate process technology. This chip is useful in many microprocessor applications where high speed, low power, and battery backup are needed. Features: - Low Power Dissipation: Operating 27.5 mW/MHz typical - Single Power Supply Voltage of 5V ± 10% - Power Down Features Using CE1 and CE2 - Data Retention Supply Voltage of 2 to 5.5V - Direct TTL Compatibility for All Inputs and Outputs DC Recommended Operating Conditions (TA = -40° to 85°C) Power Supply Voltage: 4.5V to 5.5V Input High Voltage: 2.4V min. ; VDD +0.3V max. Input Low Voltage: -0.3V min. ; 036V max. Data Retention Supply Voltage: 2.0V min. ; 5.5V max. DC Characteristics (TA = -40° to 85°C, VDD = 5V ± 10%) Input Leakage Current (VIN = 0V to VDD): ±1.0uA max. Output High Current (VOH = 2.4V): -1.0mA min Output Low Current (VOL = 0.4V): 4.0mA min. Input and Output Capacitance (TA = 25°C, f = 1 MHz): 10pF max. AC Characteristics (TA = -40° to 85°C, VDD = 5V ±10%) Read Cycle Time: 85ns min. Output Enable Access Time: 45ns max. Chip Enable Low to Output Active: 5ns min. Address Access Time: 85ns max. Write Cycle Time: 85ns min. Write Pulse Width: 60ns min. Chip Enable to End of Write: 75ns min. Data Setup Time: 35ns min. Manufactured by: Toshiba Part Number: TC551001CFI-85L Full Datasheet: Static RAM IC TC551001CFI-85L

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