West Florida Components

MOS-FET, which is an abbreviation of Metal-Oxide-Semiconductor Field Effect Transistor, is a very important kind of transistor. Many IC’s are constructed of arrays of MOS-FETS on a tiny sliver of silicon.

They are very small, easy to manufacture and many MOS-FETS consume a small amount of power making them an excellent choice for many applications.

It is the most common type of transistor available for either digital or analog circuits, replacing the bipolar transistor which was much more common in the past.

The word ‘metal’ in the name is actually now a misnomer because what was originally the gate material (often Aluminum) is now more often a layer of polysilicon (aka polycrystalline silicon).

iSuppli’s Teardown Analysis Service conducted a study of the cost of materials for the HTC Incredible. The total was $163.35 for the parts and electronic components used to build the smartphone.

Nearly 20% of the cost of the handset is from the processor which cost $31.40. Right behind the processor was the display and touch screen which is manufactured by Samsung. The display, which is an advanced Active Matrix Organic Light Emitting Diode (AMOLED), cost $31.20. In third place was the memory at $29.80 or 18.2%. It is interesting to note that cost of the 8MP Auto Focus camera in the handset was only $15.70.

The cost to manufacture the phone is a reported $10 bringing the grand total to about $175. That is amazing considering everything the Incredible can do. Think of the Incredible as a handheld computer plus camera for less than $175!

iSuppli did make note of the similarities between the HTC Incredible and the Nexus One. According to iSuppli Director, Andrew Rassweiler, “The Droid Incredible could have been dubbed the ‘Nexus Two’ given its similarity to HTC’s Nexus One introduced early this year.”

BUZ11

The BUZ11 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switchng transistors requiring high speed and low gate drive power. The BUZ11 is also used for DC-DC and DC-AC converters and in the automotive environment for injection, ABS, airbags, lampdrivers and more.

It features:

• 33A 50V
• Nanosecond Switching Speed
• Linear Transfer Characteristics
• High Input Impedance

The BUZ11 is in a TO220 package.

If you are looking at the BUZ11 with the drain (flange) at the top, the left pin is the GATE, the middle is the DRAIN, and the right lead is the SOURCE.