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2N6806 JANTX2N6806 HEXFET Power MOSFET Transistor Military International Rectifier

2N6806 JANTX2N6806 HEXFET Power MOSFET Transistor Military International Rectifier

Manufacturer: International Rectifier
Part Number: JANTX2N6806
Voltage: 200
Package: TO-3
Lead/Terminal Type: Through Hole
Number Leads/Terminals: 2
Military Spec: Yes

Price: $50.00
3 available for immediate delivery
Code: IC648APH01
Weight: 0.42oz ONZ
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Additional Information

HEXFET® Power MOSFET Transistors
Military
P-Channel

Features:
- Repetitive Avalanche Ratings
- Dynamic dv/dt Rating
- Hermetically Sealed
- Simple Drive Requirements
- Ease of Paralleling

Electrical Characteristics (TJ=25°C unless otherwise noted):
Drain-to-Source Breakdown Voltage (VGS = 0V, ID = -1.0mA): -200V min.
Static Drain-to-Source On-State Resistance (VGS =-10V, ID =-4.0A): 0.80Ω max.
Gate Threshold Voltage (VDS = VGS, ID =-250uA): -2.0V to -4.0V
Zero Gate Voltage Drain Current (VDS=-160V, VGS=0V): -25uA max.
Gate-to-Source Leakage Forward (VGS =-20V): -100nA max.
Gate-to-Source Leakage Reverse (VGS =-20V): 100nA max.
Rise Time: 100ns max.
Fall Time: 80ns max.
Input Capacitance (VGS = 0V, VDS =25V, f = 1.0MHz): 700pF max.
Output Capacitance (VGS = 0V, VDS =25V, f = 1.0MHz): 200pF max.

Source-Drain Diode Ratings and Characteristics
Continuous Source Current (Body Diode): -6.5A max.
Diode Forward Voltage (Tj = 25°C, IS =-6.5A, VGS = 0V): -6.0V max.
Reverse Recovery Time (Tj = 25°C, IF =-6.5A, di/dt ≤ -100A/us, VDD ≤ -50V): 400ns max.
Reverse Recovery Charge (Tj = 25°C, IF =-6.5A, di/dt ≤ -100A/us, VDD ≤ -50V): 4.0uc max.

Applications:
- Switching Power Supplies
- Motor Controls
- Inverters
- Choppers
- Audio Amplifiers
- High Energy Pulse Circuits

Manufactured by: International Rectifier
Part Number: JANTX2N6806

Full Datasheet: International Rectifier HEXFET® Transistor 2N6806