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TC551001CFI-85L 8 Bit SRAM CMOS IC SMT Toshiba

TC551001CFI-85L 8 Bit SRAM CMOS IC SMT Toshiba

Manufacturer: Toshiba
Part Number: TC551001CFI-85L
Package: SOIC
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 32

Price: $11.85
43 available for immediate delivery
Code: T610APF11
Weight: 0.04oz ONZ
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Additional Information

Surface Mount SRAM CMOS ICs

The TC551001CFI-85L is a 1,048,576-bit SRAM organized a 131,072 words by 8 bits. It is constructed by using Toshiba's CMOS Silicon gate process technology. This chip is useful in many microprocessor applications where high speed, low power, and battery backup are needed.

Features:
- Low Power Dissipation: Operating 27.5 mW/MHz typical
- Single Power Supply Voltage of 5V 10%
- Power Down Features Using CE1 and CE2
- Data Retention Supply Voltage of 2 to 5.5V
- Direct TTL Compatibility for All Inputs and Outputs

DC Recommended Operating Conditions (TA = -40 to 85C)
Power Supply Voltage: 4.5V to 5.5V
Input High Voltage: 2.4V min. ; VDD +0.3V max.
Input Low Voltage: -0.3V min. ; 036V max.
Data Retention Supply Voltage: 2.0V min. ; 5.5V max.

DC Characteristics (TA = -40 to 85C, VDD = 5V 10%)
Input Leakage Current (VIN = 0V to VDD): 1.0uA max.
Output High Current (VOH = 2.4V): -1.0mA min
Output Low Current (VOL = 0.4V): 4.0mA min.

Input and Output Capacitance (TA = 25C, f = 1 MHz): 10pF max.

AC Characteristics (TA = -40 to 85C, VDD = 5V 10%)
Read Cycle Time: 85ns min.
Output Enable Access Time: 45ns max.
Chip Enable Low to Output Active: 5ns min.
Address Access Time: 85ns max.

Write Cycle Time: 85ns min.
Write Pulse Width: 60ns min.
Chip Enable to End of Write: 75ns min.
Data Setup Time: 35ns min.

Manufactured by: Toshiba
Part Number: TC551001CFI-85L

Full Datasheet: Static RAM IC TC551001CFI-85L