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H11D1 Phototransistor Optocoupler IC QTC

H11D1 Phototransistor Optocoupler IC QTC

Manufacturer: QTC
Part Number: H11D1
Voltage: 300
Package: Dip
Mounting: Through Hole
Number Leads/Terminals: 6
Color: Black
Shape: Rectangle
Termination Method: Solder

Price: $0.60
109 available for immediate delivery
Code: IC439APH07
Weight: 0.03oz ONZ
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Additional Information

High Voltage Phototransistor Optocoupler ICs

The H11D1 is a phototransistor-type optically coupled optoisolators. An infrared emitting diode made from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor.

Features
High Voltage: BVCER = 300 V
High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute

Maximum Ratings
Detector
- Power Dissipation @ TA = 25°C: 300mW
- Derate: 4.0mW/°C
Collector to Emitter Voltage: 300V
Collector Base Voltage: 300V
Emitter to Collector Voltage: 7.0V
Collector Current (Continuous): 100mA

Typical Electrical Characteristics

EMITTER
Forward Voltage (IF = 10 mA): 1.15V
Forward Voltage Temp.Coefficient: -1.8mV/°C
Reverse Breakdown Voltage(IR = 10 μA): 25V
Reverse Leakage Current(VR = 6 V): .05uA

DETECTOR
Breakdown Voltage Collector to Emitter: 300V min.
Collector to Base: 300V min.
Leakage Current Collector to Emitter (VCE = 200 V, IF = 0, TA = 25°C): 100nA

Applications:
- Power supply regulators
- Digital logic inputs
- Microprocessor inputs
- Appliance sensor systems
- Industrial controls

Manufactured by: QTC
Part Number: H11D1

For reference only, we are providing a datasheet for this part number. Please note it is from a different manufacturer. West Florida Components assumes no liability for this information.

Full Datasheet: H11D1 Optocoupler IC Phototransistor