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BC847BW E6327 NPN AF Transistor Infineon

BC847BW E6327 NPN AF Transistor Infineon

Manufacturer: Infineon
Part Number: BC847BW
Voltage: 45
Package: SOT-323
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 3
RoHS Compliant: Yes

Price: $0.10
2890 available for immediate delivery
Code: J491APF12
Weight: 0.01oz ONZ
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Additional Information

NPN Silicon AF Transistors

Features:
- For AF input stages and driver applications
- High current gain
- Low collector-emitter saturation voltage
- Low noise between 30 Hz and 15 kHz

DC Electrical Characteristics (TA=25C unless otherwise noted):
Collector-emitter breakdown voltage (IC = 10 mA, IB = 0): 45V min.
Collector-base breakdown voltage (IC = 10 uA, IE = 0): 50V min.
Emitter-base breakdown voltage (IE = 0 , IC = 10 uA): 5.0V typ.
Collector-base cutoff current
- VCB = 45 V, IE = 0: 0.015uA typ.
- VCB = 30 V, IE = 0 , TA = 150 C: 5.0uA typ.
Collector-emitter saturation voltage
- IC = 10 mA, IB = 0.5 mA: 90mV typ. ; 250mV max.
- IC = 100 mA, IB = 5 mA: 200mV typ. ; 60mmV max.
Base emitter saturation voltage
- IC = 10 mA, IB = 0.5 mA: 700mV typ.
- IC = 100 mA, IB = 5 mA: 900mV typ.
Base-emitter voltage
- IC = 2 mA, VCE = 5 V: 580mV min. ; 660V typ. ; 700mV max.
- IC = 10 mA, VCE = 5 V: 770mV max.

AC Electrical Characteristics (TA=25C unless otherwise noted):
Transition frequency (IC = 10 mA, VCE = 5 V, f = 100 MHz): 250MHz typ.
Collector-base capacitance (VCB = 10 V, f = 1 MHz): 0.95pF typ.
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz): 9.0pF typ.
Noise figure: 1.2dB typ. ; 4.0dB max.
Equivalent noise voltage: 0.135uV max.

Manufactured by: Infineon
Part Number: BC847BW

Full Datasheet: SMT NPN Transistor BC847BW