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2N3772 20A 60V NPN Bipolar Transistor Silicon Power

2N3772 20A 60V NPN Bipolar Transistor Silicon Power

Manufacturer: Motorola
Part Number: 2N3772
Amps: 20a
Voltage: 60V
Package: TO-3
Lead/Terminal Type: Radial
Number Leads/Terminals: 2
Material: Silicon

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Additional Information


High Power NPN Silicon Bipolar Transistors
New Old Stock
TO-3 Case

Max. Ratings:
Collector-Emitter Voltage: 60V
Collector-Base Voltage: 100V
Emitter-Base Voltage: 7V
Collector Current-Continuous:20A ; Peak: 30A
Base Current-Continuous: 5A ; Peak: 15A
Total Device Dissipation @ TC = 25°C: 150W
Derate above 25°C: 0.855W/°C
Operating & Storage Junction Temperature: -65°C to 200°C

Thermal Characteristics:
Thermal Resistance, Junction to Case: 1.17°C/W

Electrical Characteristics OFF(TA=25°C unless otherwise noted):
Collector-Emitter Sustaining Voltage: 60V min.
(IC = 0.2 Adc, IB = 0)
Collector-Emitter Sustaining Voltage: 80V min.
(IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms)
Collector–Emitter Sustaining Voltage: 70V min.
(IC = 0.2 Adc, RBE = 100 Ohms)
Collector Cutoff Current(ICEO): 10mA max.
(VCE = 50 Vdc, IB = 0)
Emitter Cutoff Current(IEBO): 5mA
(VBE = 7.0 Vdc, IC = 0)

Electrical Characteristics ON (TA=25°C unless otherwise noted):
DC Current Gain: 15 min. ; 60 max.
(IC = 10 Adc, VCE = 4.0 Vdc)
Collector–Emitter Saturation Voltage: 1.4V max.
(IC = 10 Adc, IB = 1.0 Adc)
Base–Emitter On Voltage: 2.2Vmax.
(IC = 10 Adc, VCE = 4.0 Vdc)
Current-Gain-Bandwidth Product: 0.2MHz min.
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz)
Small–Signal Current Gain: 40 min.
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

Second Breakdown:
Second Breakdown Energy with Base Forward Biased: 2.5A
(t = 1.0 s (non-repetitive), (VCE = 60 Vdc))

Applications:
Linear Amplifiers
Series Pass Regulators
Inductive Switching Applications

Manufactured by: Motorola (ON Semiconductor)
Part number: 2N3772

Full datasheet: 2N3772