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2N5660 JANTX2N5660 2A 200V Military Power Silicon Transistor

2N5660 JANTX2N5660 2A 200V Military Power Silicon Transistor

Manufacturer: Unitrode
Part Number: JANTX2N5660
Amps: 2a
Voltage: 200V
Package: TO-66
Lead/Terminal Type: Radial
Number Leads/Terminals: 2
Material: Silicon

Price: $60.00
30 available for immediate delivery
Code: T444PD
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Additional Information


Power Silicon Transistors NPN
Military
New Old Stock
1988 Date Code
Vintage Parts-Not in Pristine Condition
TO-66 Package

Maximum Ratings:
Collector-Emitter Voltage: 200V
Collector-Base Voltage: 250V
Collector-Emitter Voltage: 250V
Emitter-Base Voltage: 6.0V
Base Current: 0.5A
Collector Current: 2.0A
Total Power Dissipation @ TA=25C: 2W
Derate linearly 11.4 mW/C for TA >+ 25C
Operating & Storage Junction Temperature: -65C to 200C

Electrical Characteristics (OFF) (TC=25C unless otherwise noted):
Collector-Emitter Breakdown Voltage: 200V min
- (IC = 10 mAdc)
Collector-Base Breakdown Voltage: 250V min
- (IC = 10 mAdc, RBE = 100Ω)
Emitter-Base Breakdown Voltage: 6V min
- (IE = 10 mAdc)
Collector-Emitter Cutoff Current: 0.2A max
- (VCE = 300 Vdc)
Collector-Base Cutoff Current: 0.1A max
- (VCB = 300 Vdc)

Electrical Characteristics (ON):
- (Pulse Width = 300ms, Duty Cycle ≤ 2.0%.)
Forward-Current Transfer Ratio: 40 min
- (IC = 50 mAdc, VCE = 2.0 Vdc)
Collector-Emitter Saturation Voltage: 0.4V max
- (IC = 1.0 Adc, IB = 0.1 Adc)
Base-Emitter Saturation Voltage: 1.2V max
- (IC = 1.0 Adc, IB = 0.1 Adc)

Other Specs:
Output Capacitance: 45pF max
- (VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Turn-On Time: 0.25S max
- (VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 25 Adc)
Turn-Off Time: 1.2s max
- (VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 25 Adc)

Manufactured by: Unitrode
Part number: JANTX2N5660

Full datasheet: 2N5660