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2N6341 JANTX2N6341 10A 150V Military Transistor

2N6341 JANTX2N6341 10A 150V Military Transistor

Manufacturer: Microsemi
Part Number: JANTX2N6341
Amps: 10
Voltage: 150V
Package: TO-3
Lead/Terminal Type: Radial
Number Leads/Terminals: 3

Price: $525.00
26 available for immediate delivery
Code: T466PD
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10+$490.00
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Additional Information


Military Power Transistors
Qualified per MIL-PRF-19500/509
NPN
Gold Plated Leads

Maximum Ratings:
Collector-Emitter Voltage: 150V
Collector-Base Voltage: 180V
Emitter-Base Voltage: 6.0V
Base Current: 10A
Collector Current: 25A
Total Power Dissipation: TA=25 deg. C: 200W , TC=100 deg.C: 112W
- Derate linearly 1.14 W/deg. C for TC=25deg. C & TC=200 deg. C
Operating & Storage Junction Temperature: -65 deg. C to 175 deg.C
Thermal Resistance, Junction-to-Case: 1.875 deg. C/W

Electrical Characteristics OFF (TC=25 deg. C unless otherwise noted):
Collector-Emitter Breakdown Voltage @ IC=50mA: 150V min.
Collector-Emitter Cutoff Current @ VCE=75V: 50uA
Collector-Emitter Cutoff Current @ VCE=150V, VBE=1.5V: 10uA
Emitter-Base Cutoff Current @ VEB=6V: 100uA
Collector-Base Cutoff Current @ VCB=180V: 10uA

Electrical Characteristics ON
- (Pulse Test: Pulse Width = 300us, Duty Cycle ≤ 2.0%.)
Forward-Current Transfer Ratio:
- IC = 0.5 Adc, VCE = 2.0 Vdc: 40 min.
- IC = 10 Adc, VCE = 2.0 Vdc: 30 min. , 120 max.
- IC = 25 Adc, VCE = 2.0 Vdc : 12 min.
Collector-Emitter Saturation Voltage:
- IC = 10 Adc, IB = 1.0 Adc: 1V max.
- IC = 25 Adc, IB = 2.5 Adc: 1.8V max.
Base-Emitter Saturation Voltage;
-IC = 10 Adc, IB = 1.0 Adc: 1.8V max.

Manufactured by: Silicon Transistor Corp. (Microsemi)
Part Number: JANTX2N6341

Full Datasheet: JANTX2N6341