The PDM41024 is a high-performance CMOS static RAM IC. It is organized
a 131,072 x 8 bits. Writing is accomplished when the write enable (WE) and the
chip enable (CE1) inputs are both LOW and CE2 is HIGH. Reading is accomplished
when WE and CE2 remain HIGH and CE1 and OE are both LOW.
High Speed Access Time
Low Power Operation:
- Active: 450mW
- Standby: 50mW
Single 5V (�10%) Power Supply
TTL-compatible Inputs and Outputs
Recommended DC Operating Condition
Supply Voltage (VCC): 4.5V to 5.5V
DC Electrical Characteristics (VCC = 5.0V � 10%)
(See Data Sheet for Test Conditions)
Input Leakage Current: -5.0uA to 5.0uA
Output Leakage Current: -5.0uA to 5.0uA
Input Low Voltage: -0.5V to 0.8V
Input High Voltage: 2.2V to 6.0V
Output Low Voltage: 0.4V max.
Output High Voltage: 2.4V min.
Input/Output Capacitance: 8.0pF
Manufactured by: Paradigm
Part Number: PDM41024SA20SO