Item Specifications and Additional Information:
Amplifier Transistors
PNP Silicon
Maximum Ratings
Collector-Emitter Voltage: -100V
Collector-Base Voltage: -100V
Emitter-Base Voltage: -4.0V
Collector Current-Continuous: -600mA
Total Device Dissipation
- @ TA = 25°C: 625mW / Derate above 25°C: 5.0mW/°C
- @ TC = 25°C: 1.5W / Derate above 25°C:12mW/°C
Thermal Characteristics:
Thermal Resistance, Junction to Ambient: 200°C/W
Thermal Resistance, Junction to Case: 83.3°C/W
Electrical Characteristics (TA=25°C unless otherwise noted):
OFF Characteristics
Collector–Emitter Breakdown Voltage(IC = –1.0 mAdc, IB = 0): -100V min.
Collector Cutoff Current (VCB = –50 Vdc, IE = 0): -1.0uA max.
Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0): -100nA max.
ON Characteristics
DC Current Gain (IC = –50 mAdc, VCE = –5.0 Vdc): 40 min. ; 250 max.
Collector–Emitter Saturation Voltage (IC = –50 mAdc, IB = –5.0 mAdc): -0.30V
Base-Emitter Saturation Voltage (IC = –50 mAdc, IB = –5.0 mAdc): -1.2V max.
SMALL-SIGNAL Characteristics
Current-Gain - Bandwidth Product (IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz): 60MHz min.
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz): 8.0pF max.
Small-Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz): 20 min.
Manufactured by: ON Semiconductor
Part Number: MPSL51RLRA
Full Datasheet: ON Semiconductor Transistor MPSL51RLRA |
