SI9430DY Surface Mount IC MOSFET 8 Pin
Some images are stock photos close Manufacturer: Siliconix Part Number: SI9430DY	Price: $2.00 54 available for immediate delivery Product code: IC376PD
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Item Specifications and Additional Information: SMT IC's P-Channel Enhancement-Mode MOSFET Drain-Source Voltage: -20V Gate-Source Voltage: +/-20V Continuous Drain Current(Tj=150°C; TA=:25°C): +/-5.8A Pulsed Drain Current: ±20A Continuous Source Current(Diode Conduction): -2.4A Max. Power Dissipation: 2.5W @ 25°C Max. Junction and Storage Temperature Range: 150°C Static Specs @ Tj=25°C unless otherwise noted) Gate Threshold Voltage(VDS=VGS; ID=-250µA): -1.0V min. Gate-Body Leakage(VDS=0V; VGS=±20V): ± 100nA max. Zero Gate Voltage Drain Current(VDS=-16V; VGS=0V): -1 microamp On-State Drain Current(VDS≤-5V; VGS=-10V): -20A min. Drain-Source on-State Resistance(VGS=10V; ID=-5.3A): 0.050Ω max. Forward Transconductance(VDS=-15V; ID=-5.3A): 9.5 seconds typ. Diode Forward Voltage(Is=-2.4A; VGS=0V): -1.2V max. Dynamic Specs. @ 25°C unless otherwise noted) Total Gate Charge(VDS=-10V; VGS=-10V;ID=-5.3A): 27nC typ. Gate-Source Charge(VDS=-10V; VGS=-10V;ID=-5.3A): 4.5nC typ. Gate-Drain Charge(VDS=-10V; VGS=-10V;ID=-5.3A): 5.6nC typ. Turn-On Delay Time(VDD=-10V;RL=10Ω;ID≈-1A;VGEN=-10V;RG=6Ω): 15ns typ. Rise Time(VDD=-10V;RL=10Ω;ID≈-1A;VGEN=-10V;RG=6Ω): 25ns Turn-Off Delay Time(VDD=-10V;RL=10Ω;ID≈-1A;VGEN=-10V;RG=6Ω): 56ns typ. Fall Time(VDD=-10V;RL=10Ω;ID≈-1A;VGEN=-10V;RG=6Ω): 23ns typ. Source Drain Reverse Recovery Time(IF=-2.4A; di/dt=100A/µs Manufactured by: Siliconex Part number: SI9430DY Full datasheet: SI9430DY

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