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SI9430DY Surface Mount IC MOSFET 8 Pin

SI9430DY Surface Mount IC MOSFET 8 Pin

Manufacturer: Siliconix
Part Number: SI9430DY

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Additional Information


SMT IC's P-Channel Enhancement-Mode MOSFET

Drain-Source Voltage: -20V
Gate-Source Voltage: +/-20V
Continuous Drain Current(Tj=150°C; TA=:25°C): +/-5.8A
Pulsed Drain Current: ±20A
Continuous Source Current(Diode Conduction): -2.4A
Max. Power Dissipation: 2.5W @ 25°C
Max. Junction and Storage Temperature Range: 150°C

Static Specs @ Tj=25°C unless otherwise noted)
Gate Threshold Voltage(VDS=VGS; ID=-250µA): -1.0V min.
Gate-Body Leakage(VDS=0V; VGS=±20V): ± 100nA max.
Zero Gate Voltage Drain Current(VDS=-16V; VGS=0V): -1 microamp
On-State Drain Current(VDS≤-5V; VGS=-10V): -20A min.
Drain-Source on-State Resistance(VGS=10V; ID=-5.3A): 0.050Ω max.
Forward Transconductance(VDS=-15V; ID=-5.3A): 9.5 seconds typ.
Diode Forward Voltage(Is=-2.4A; VGS=0V): -1.2V max.

Dynamic Specs. @ 25°C unless otherwise noted)
Total Gate Charge(VDS=-10V; VGS=-10V;ID=-5.3A): 27nC typ.
Gate-Source Charge(VDS=-10V; VGS=-10V;ID=-5.3A): 4.5nC typ.
Gate-Drain Charge(VDS=-10V; VGS=-10V;ID=-5.3A): 5.6nC typ.
Turn-On Delay Time(VDD=-10V;RL=10Ω;ID≈-1A;VGEN=-10V;RG=6Ω): 15ns typ.
Rise Time(VDD=-10V;RL=10Ω;ID≈-1A;VGEN=-10V;RG=6Ω): 25ns
Turn-Off Delay Time(VDD=-10V;RL=10Ω;ID≈-1A;VGEN=-10V;RG=6Ω): 56ns typ.
Fall Time(VDD=-10V;RL=10Ω;ID≈-1A;VGEN=-10V;RG=6Ω): 23ns typ.
Source Drain Reverse Recovery Time(IF=-2.4A; di/dt=100A/µs

Manufactured by: Siliconex
Part number: SI9430DY

Full datasheet: SI9430DY