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2N6768 JANTX2N6768CDBN MosFET Transistor Military Siliconix

2N6768 JANTX2N6768CDBN MosFET Transistor Military Siliconix

Manufacturer: Silconix
Part Number: JANTX2N6768CDBN
Amps: 14
Voltage: 400
Ohms: .3
Package: TO-204AA
Lead/Terminal Type: Through Hole
Number Leads/Terminals: 2
Military Spec: Yes

Price: $45.00
7 available for immediate delivery
Code: IC646APH03
Weight: 0.42oz ONZ
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Additional Information

Military Power MosFET Transistors

Features:
- Repetitive Avalanche Ratings
- Dynamic dv/dt Rating
- Hermetically Sealed
- Simple Drive Requirements
- Ease of Paralleling

Maximum Ratings
Continuous Drain Current (ID @ VGS = 10V, TC = 25�C): 14A
Pulsed Drain Current: 56A
Max. Power Dissipation: 150w
Gate-to-Source Voltage: �20V
Single Pulse Avalanche Energy: 11.3mJ
Avalanche Current: 14qa
Repetitive Avalanche Energy: 15mJ
Peak Diode Recovery dv/dt: 4.0V/ns

Electrical Characteristics @ Tj = 25�C (Unless Otherwise Specified)
(See Datasheet for Test Conditions)
Drain-to-Source Breakdown Voltage: 400V min.
Static Drain-to-Source On-State Resistance: 0.300 ohms max.
Zero Gate Voltage Drain Current: 25uA max.
Total Gate Charge: 52nC to 110nC
Gate-to-Drain (�Miller�) Charge: 25nC to 65nC
Rise Time: 190ns max.
Fall Time: 130ns max.
Total Inductance: 6.1nH typ.
Input Capacitance: 2600pF typ.
Output Capacitance: 680pF typ.

Source-Drain Diode Ratings and Characteristics
Continuous Source Current (Body Diode): 14A max.
Diode Forward Voltage: 1.7V max.
Reverse Recovery Time: 1200nS max.
Reverse Recovery Charge: 250nC max.

Applications:
- Switching Power Supplies
- Motor Controls
- Inverters
- Choppers
- Audio Amplifiers
- High Energy Pulse Circuits

Manufactured by: Siliconix
Part Number: JANTX2N6768CDBN

For reference only, we are providing a datasheet for this part number, please note it is from a different manufacturer. West Florida Components assumes no liability for this information.

Full Datasheet: Siliconix MosFET Transistor JANTX2N6768CDBN