MT4LC4M16R6-5F 4M x 16 EDO DRAM CMOS Memory IC Micron
Some images are stock photos close Manufacturer: Micron Part Number: MT4LC4M16R6-5F Package: TSOP Lead/Terminal Type: Surface Mount Number Leads/Terminals: 50	Price: $10.00 Shipping Weight: 0.03 ounces 38 available for immediate delivery Product code: IC681APH02
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Item Specifications and Additional Information: 4M x 16 EDO DRAM CMOS Memory ICs Configuration: 4 Meg x 16 Refresh: 4K Row Address: 4K (A0-A11) Column Address: 1K (A0-A9) Timing: 50ns The MT4LC4M16R6-5F is high-speed CMOS dynamic random-access memory IC. It operates on 3.0V to 3.6V and has 67,108,864 bits. The memory locations are organized in 4,096 rows by 1,024 columns. Features: - Single +3.3V ±0.3V power supply - Industry-standard x16 pinout, timing, functions,and package - High-performance CMOS silicon-gate process - All inputs, outputs and clocks are LVTTL-compatible - Extended Data-Out (EDO) PAGE MODE access - 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms DC Electrical Characteristics: Supply voltage: 3.0V - 3.6V Input High Voltage (Valid Logic 1; All inputs, I/Os and any NC): 2.0V to VCC + 0.3V Input Low Voltage (Valid Logic 0; All inputs, I/Os and any NC): -0.3V to 0.8V Input Leakage Current: -2.0uA to 2.0uA Output High Voltage (IOUT = -2mA): 2.4V min Output Low Voltage (IOUT = 2mA): 0.4V max. Output Leakage Current: -5.0uA to 5.0uA ICC Operating Conditions and Maximum Limits (See Data Sheet for Conditions): Standby Current TTL: 1mA Standby Current CMOS: 500uA Operating Current Random READ/WRITE: 150mA Operating Current EDO Page Mode: 120mA Refresh Current RAS#-Only: 150mA Refresh Current CBR: 150mA Capacitance Input Capacitance: Address pins: 5pF max. Input Capacitance: RAS#, CAS#, WE#, OE#: 7pF max. Input/Output Capacitance: DQ: 7pF max. Manufactured by: Micron Part Number: MT4LC4M16R6-5F Full Datasheet: Micron EDO DRAM 4M x 16 MT4LC4M16R6-5F

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