Item Specifications and Additional Information:
4M x 16 EDO DRAM CMOS Memory ICs
Configuration: 4 Meg x 16
Row Address: 4K (A0-A11)
Column Address: 1K (A0-A9)
The MT4LC4M16R6-5F is high-speed CMOS dynamic random-access memory IC.
It operates on 3.0V to 3.6V and has 67,108,864 bits. The memory locations are
organized in 4,096 rows by 1,024 columns.
- Single +3.3V ±0.3V power supply
- Industry-standard x16 pinout, timing, functions,and package
- High-performance CMOS silicon-gate process
- All inputs, outputs and clocks are LVTTL-compatible
- Extended Data-Out (EDO) PAGE MODE access
- 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms
DC Electrical Characteristics:
Supply voltage: 3.0V - 3.6V
Input High Voltage (Valid Logic 1; All inputs, I/Os and any NC): 2.0V to VCC + 0.3V
Input Low Voltage (Valid Logic 0; All inputs, I/Os and any NC): -0.3V to 0.8V
Input Leakage Current: -2.0uA to 2.0uA
Output High Voltage (IOUT = -2mA): 2.4V min
Output Low Voltage (IOUT = 2mA): 0.4V max.
Output Leakage Current: -5.0uA to 5.0uA
ICC Operating Conditions and Maximum Limits (See Data Sheet for Conditions):
Standby Current TTL: 1mA
Standby Current CMOS: 500uA
Operating Current Random READ/WRITE: 150mA
Operating Current EDO Page Mode: 120mA
Refresh Current RAS#-Only: 150mA
Refresh Current CBR: 150mA
Input Capacitance: Address pins: 5pF max.
Input Capacitance: RAS#, CAS#, WE#, OE#: 7pF max.
Input/Output Capacitance: DQ: 7pF max.
Manufactured by: Micron
Part Number: MT4LC4M16R6-5F
Full Datasheet: Micron EDO DRAM 4M x 16 MT4LC4M16R6-5F