IRFBE30 4.1A 800V N-Channel Mosfet Transistor
Some images are stock photos close Manufacturer: International Rectifier Part Number: IRFBE30 Amps: 4.1A Voltage: 800V Package: TO-220AB Lead/Terminal Type: Radial Number Leads/Terminals: 3	Price: $1.10 346 available for immediate delivery Product code: T263
	Volume Pricing Quantity Price Each 1-99 $1.10 100+ $1.00
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Item Specifications and Additional Information: Single N-Channel MosFET Third generation HexFETs from International Rectifier provide the designer with the best combination of fast-switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Ratings: Drain to Source Voltage (Vdss):800V Current-Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs @ 25° C: 3 Ohm @ 2.5A, 10V Input Capacitance (Ciss) @ Vds: 1300pF @ 25V Power-Max: 125W Gate Charge (Qg) @ Vgs: 78nC @ 10V Package: TO-220AB With removable heatsink Full Datasheet IRFBE30 Manufactured by: International Rectifier Part Number: IRFBE30

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