IRGBC30MD2 IGBT Insulated Gate Bipolar Transistor International Rectifier
Some images are stock photos close Manufacturer: International Rectifier Part Number: IRGBC30MD2 Voltage: 600 Package: TO-220AB Number Leads/Terminals: 3	Price: $3.00 Shipping Weight: 0.07 ounces 83 available for immediate delivery Product code: T567PF01
	Volume Pricing Quantity Price Each 1-9 $3.00 10+ $2.75
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Item Specifications and Additional Information: IGBT Insulated Gate Bipolar Transistors N-Channel Features: - Short circuit rated -10μs @125°C, V GE = 15V - Switching-loss rating includes all "tail" losses - HEXFRED™ soft ultrafast diodes - Optimized for medium operating frequency (1 to 10kHz) Maximum Ratings Collector-to-Emitter Voltage: 600V Continuous Collector Current (IC @ TC=25°C): 26A Pulsed Collector Current: 52A Clamped Inductive Load Current: 52A Diode Continuous Forward Current (IF @ TC = 100°C): 12A Diode Maximum Forward Current: 52A Short Circuit Withstand Time: 10us Gate-to-Emitter Voltage: ±20V Maximum Power Dissipation (PD @ TC = 25°C): 100W Operating Junction and Storage Temperature Range: -55°C to 150°C Thermal Resistance: Junction-to-Case (IGBT): 1.2°C/W max. Junction-to-Case (Diode): 2.5°C/W max. Case-to-Sink, flat, greased surface: 0.50°C/W typ. Junction-to-Ambient, typical socket mount: 80°C/W max. Manufactured by: International Rectifier Part Number: IRGBC30MD2 Full Datasheet: IRGBC30MD2

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