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BCP53T1G Bipolar Transistor ON Semiconductor

BCP53T1G Bipolar Transistor ON Semiconductor

Manufacturer: On Semiconductor
Part Number: BCP53T1G
Package: SOT-223
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 3

Price: $0.15
1796 available for immediate delivery
Code: CS219PD
Volume Pricing
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10-99$0.12
100+$0.09

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Additional Information


PNP Bipolar Transistors
NPN Complement: BCP56
Medium High Power Current

Electrical Characteristics (TA=25�C unless otherwise noted):

OFF Specifications:
Collector-Base Breakdown Voltage (IC = -100 μAdc, IE = 0): -100V min.
Collector-Emitter Breakdown Voltage (IC = -1.0 mA, IB = 0): -80V min.
Collector-Emitter Breakdown Voltage (IC = -100 μA, RBE = 1.0 kohm): -100V min.
Emitter-Base Breakdown Voltage (IE = -10 μA, IC = 0): -5.0V min.
Collector-Base Cutoff Current (VCB = -30 V, IE = 0): -100nA max.
Emitter‐Base Cutoff Current (VEB = -5.0 V, IC = 0): -10�A max.

ON Specifications:
DC Current Gain (IC = -5.0 mA, VCE = -2.0 V) All Part Types: 25 min.
Collector‐Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA): -0.5V
Base‐Emitter On Voltage (IC = -500 mA, VCE = -2.0 V): -1V max.

DYNAMIC Specifications:
Current-Gain Bandwidth Product: 50MHz
(IC = -10 mA, VCE = -5.0 V, f = 35 MHz)

Manufactured by: ON Semiconductor
Part Number: BCP53T1G

Full Datasheet: BCP53T1G

RoHS Compliant