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SPD50P03L 50P03L 50A 30V Transistor MOSFET Infineon

SPD50P03L 50P03L 50A 30V Transistor MOSFET Infineon

Manufacturer: Infineon
Part Number: SPD50P03L
Amps: 50a
Voltage: 30V
Package: TO-252
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 3

Price: $1.00
741 available for immediate delivery
Code: CS226PD
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Additional Information


MOSFET Small Signal Transistors
P-Channel
5 Pin TO-252 Package

Features:
Enhancement mode
Logic level
175C operating temperature
Avalanche rated
dv /dt rated
High current rating

Static Characteristics (Tj=25C unless otherwise noted)
Drain-source breakdown voltage: -30V min.
- (VGS=0 V, I D=-250 μA)
Gate threshold voltage: -1.5V typ.
- (VDS=VGS,I D=-250 μA)
Zero gate voltage drain current: -0.1Atyp.
- (VDS=-30 V, VGS=0 V)
Gate-source leakage current: -10nA typ.
- (VGS=-20 V, VDS=0 V)
Drain-source on-state resistance: 8.5mΩ typ.
- (VGS=-4.5 V,I D=-30 A)

Dynamic Characteristics:
Input capacitance: 4590pF typ.
- (VGS=0 V,VDS=-25 V, f =1 MHz)
Output capacitance: 1220pF typ.
- (VGS=0 V,VDS=-25 V, f =1 MHz)
Turn-on delay time: 14.8ns typ.
- (VDD=-15 V,VGS=-10 V, I D=-1 A,RG=6Ω)
Rise time: 21.7ns typ.
- (VDD=-15 V,VGS=-10 V, I D=-1 A,RG=6Ω)

Reverse Diode
Diode continuous forward current: -50A max.
- (TC = 25C)
Diode forward voltage: -1V typ.
- (VGS=0 V, I F=50 A,T j=25 C)
Reverse recovery time: 38ns typ.
- (VR=-15 V, I F=|I S|,di F/dt =100 A/μs)

Manufactured by: Infineon
Part Number: 50P03L

Full Datasheet: 50P03L