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MG50J2YS50 50A 600V IGBT GTR Module Silicon N Channel

MG50J2YS50 50A 600V IGBT GTR Module Silicon N Channel

Manufacturer: Toshiba
Part Number: MG50J2YS50
Amps: 50
Voltage: 600

Price: $68.00
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Additional Information


Half-Bridge IGBT Modules
GTR Module Silicon N Channel

Max. Ratings: (@ 25°C)
Collector-Emitter Voltage: 600V
Gate-Emitter Voltage: ±20V
Collector Current (DC): 50A
Forward Current (DC): 50A
Collector Power Dissipation: 280W
Junction Temperature: 150°C
Isolation Voltage (AC 1 min.): 2500V

Electrical Characteristics:
Gate Leakage Current (VGE=±20V, VCE=0): ±500nA
Collector Cut-Off Current (VCE=600V, VGE=0): 1.0mA
Gate Emitter Cut-Off Voltage (IC-5mA, VCE=5V): 5V min ; 7V typ. ; 8V max.
Collector-Emitter Saturation Voltage (IC=50A, VGE=15V): 2.10V typ. ; 2.70V max.
Input Capacitance (VCE=10V, VGE=0, f=1MHz: 4950pF
Switching Time: (Inductive Load VCC=300V, IC=50A, VGE=±15V, RG=24Ω)
-Turn-on Delay Time: .08µs typ. ; .16µs max.
-Rise time: .12µs typ. ; .24µs max.
-Turn-on Time: .40µs typ. ; .80µs max.
-Turn-off Delay Time: .20µs typ. ; .40µs max.
-Fall Time: .15µs typ. ; .30µs max.
-Turn-off Time: .50µs typ. ; 1.0µs max.
Forward Voltage (IF=50A, VGE=0): 2.3V typ. ; 3.0V max.
Reverse Recovery Time: .08µs typ. ; .15µs max.
(IF=50A, VGE=-10V, di/dt=100A/µs)

Features:
Electrodes isolated from case
High input impedence
Complete Half Bridge in one package
Enhancement-Mode
High Speed
Low saturation Voltage

Applications:
High Speed Switching
Motor Control

Manufactured by: Toshiba
Part number: MG50J2YS50

Full datasheet: MG50J2YS50