MUN5315DW1T1 100mA 50V SMT Transistor ON Semiconductor
Manufacturer: On Semiconductor
Part Number: MUN5315DW1T1
Amps: .1A
Voltage: 50V
Package: SOT-363
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 6
Price: $0.15
3000 available for immediate delivery
Code: G135PE06
Weight: 0.01oz
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Additional Information
DESCRIPTION / ADDITIONAL INFORMATIONDual Bias Resistor Transistors
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device.
Features:
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
Thermal Characteristics (FR-4 @ Minimum Pad)
One Junction Heated
- Total Device Dissipation (TA = 25°C): 187mW max.
- Derate above 25°C: 1.5mW/°C max.
- Thermal Resistance - Junction-to-Ambient: 670°C/W
Both Junctions Heated
- Total Device Dissipation (TA = 25°C): 250mW max.
- Derate above 25°C: 2.0mW/°C
- Thermal Resistance - Junction-to-Ambient: 493°C/W
- Thermal Resistance - Junction-to-Lead: 188°C/W
- Junction and Storage Temperature: -55° to 150°C
Electrical Characteristics (TA=25°C unless otherwise notedcommon for Q1 and Q2, − minus sign for Q1 (PNP) omitted):
OFF Characteristics
Collector-Base Cutoff Current (VCB = 50 V, IE = 0): 100nA max.
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0): 500nA max.
Emitter-Base Cutoff Current: 0.9mA max.
Collector-Base Breakdown Voltage (IC = 10 uA, IE = 0): 50V min.
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0): 50V min.
ON Characteristics:
Output Voltage (on)(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ): 0.2V max.
Output Voltage (off)(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ): 4.9V min.
Input Resistor: 10kΩ
Manufactured by: ON Semiconductor
Part Number: MUN5315DW1T1
Full Datasheet: MUN5315DW1T1