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2N5551 600mA 160V Bipolar Transistor

Manufacturer: On Semiconductor
Part Number: 2N5551
Amps: .6A
Voltage: 160V
Package: TO-92
Lead/Terminal Type: Radial
Number Leads/Terminals: 3

Price: $0.10
390 available for immediate delivery
Code: G165PE06
Weight: 0.01oz ONZ
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Additional Information

Bipolar Amplifier Transistors
Marking on Part: G42 2N5551
Preformed/Bent Leads

We are unable to determine the manufacturer of this the part. The following information has been compiled after comparing and matching specifications from several datasheets from a number of different manufacturers. We are supplying this information for reference only.

OFF Characteristics:
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0): 160V min.
Collector-Base Breakdown Voltage (IC = 100 uAdc, IE = 0 ): 180V min.
Emitter-Base Breakdown Voltage (IE = 10 uAdc, IC = 0): 6.0V min.
Collector Cutoff Current (VCB = 120 Vdc, IE = 0): 50nA max.
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0): 50nA max.

ON Characteristics:
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc): 80 min.
Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc): .20V max.
Base-Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc): 1.0V max.

SMALL SIGNAL Characteristics:
Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz): 100MHz min. ; 300MHz max.
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz): 6.0pF max.
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz): 20pF max.
Small-Signal Current Gain ((IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz): 50 min. ; 200 max.
Noise Figure (IC = 250 uAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz): 8.0dB max.

Part Number: 2N5551

For reference only, we are providing a datasheet for this part number, please note that we do not know the manufacturer of the part we have in stock. West Florida Components assumes no liability for this information.

ON Semiconductor Datasheet: 2N5551