IRL3103S HexFET Power MosFET International Rectifier
Price: $2.00
419 available for immediate delivery
Code: G378APF04
Weight: 0.06oz
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Additional Information
HexFET� Power MosFETFeatures:
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
Electrical Characteristics (TJ=25�C unless otherwise noted):
Drain-to-Source Breakdown Voltage (VGS = 0V, ID = 250μA): 30V min.
Static Drain-to-Source On-Resistance (VGS = 10V, ID = 34A): 12mΩ max.
Forward Transconductance (VDS = 25V, ID = 34A): 22 S min.
Gate-to-Source Forward Leakage (VGS = 16V): 100nA
Total Gate Charge: 33nC max.
Input Capacitance: 1650pF typ.
Output Capacitance: 650pF typ.
Source-Drain Rating and Characteristics:
Continuous Source Current (Body Diode): 64A max.
Pulsed Source Current (Body Diode: 220A max.
Diode Forward Voltage: 1.2V max.
Reverse Recovery Time: 57ns typ.
Reverse Recovery Charge: 110nC typ.
Manufactured by: International Rectifier
Part Number: IRL3103S
Full Datasheet: IRL3103S International Rectifier MosFET