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IRLR3103TR 55A 30V N Channel MosFET International Rectifier

IRLR3103TR 55A 30V N Channel MosFET International Rectifier

Manufacturer: International Rectifier
Part Number: IRLR3103TR
Amps: 55
Voltage: 30
Package: DPAK
Lead/Terminal Type: Surface Mount
Number Leads/Terminals: 3

Price: $1.15
1931 available for immediate delivery
Code: G443APF05
Weight: 0.01oz ONZ
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Additional Information

HEXFET® Power MosFETs
N-Channel

Features:
- Logic-Level Gate Drive
- Ultra Low On-Resistance
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated

Electrical Characteristics (TJ=25°C unless otherwise noted):
Drain-to-Source Breakdown Voltage (VGS = 0V, ID = 250uA): 30V min.
Static Drain-to-Source On-Resistance (VGS = 10V, ID = 33A): 0.019Ω max.
Forward Transconductance (VDS = 25V, ID = 34A): 23S min.
Drain-to-Source Leakage Current (VDS = 30V, VGS = 0V): 25uA max.
Gate-to-Source Forward Leakage (VGS = 16V): 100nA max.
Total Gate Charge (ID = 34A, VDS = 24V, VGS = 4.5V): 50nC max.
Input Capacitance (VGS = 0V, VDS = 25V, f = 1.0MHz): 1600pFtyp.

Source-Drain Ratings/Characteristics:
Continuous Source Current (Body Diode): 55A max.
Diode Forward Voltage (TJ = 25°C, IS = 28A, VGS = 0V): 1.3V max.
Reverse Recovery Time (TJ = 25°C, IF = 34A, di/dt = 100A/μs): 81ns typ.
Reverse Recovery Charge (TJ = 25°C, IF = 34A, di/dt = 100A/μs): 210nC

Manufactured by: International Rectifier
Part Number: IRLR3103TR

Full Datasheet: International Rectifier MosFET IRLR3103TR