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MPS2222ARL 600mA 40V NPN Bipolar Transistor ON Semiconductor®

MPS2222ARL 600mA 40V NPN Bipolar Transistor ON Semiconductor®

Manufacturer: ON Semiconductor®
Part Number: MPS2222ARL
Capacitance (uF): .000008
Amps: .6
Voltage: 40
Watts: .625
Package: TO-92
Mounting: Through Hole
Lead/Terminal Type: Radial
Number Leads/Terminals: 2
Color: Black
Temperature: -55 to 150°C
Termination Method: Solder

Price: $0.10
1224 available for immediate delivery
Code: G528APF08
Weight: 0.01oz ONZ
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Additional Information

Bipolar NPN Silicon Transistors

Maximum Ratings
Collector-Emitter Voltage: 40V
Collector-Base Voltage: 75V
Emitter-Base Voltage: 6.0V
Collector Current-Continuous: 600mA
Total Device Dissipation
- @ TA = 25°C: 625mW / Derate above 25°C: 5.0mW/°C
- @ TC = 25°C: 1.5W / Derate above 25°C:12mW/°C
Electrical Characteristics (TA=25°C unless otherwise noted):

OFF Characteristics:
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc): 10nA max.
Collector Cutoff Current (VCB = 60 Vdc, IE = 0): 0.01uA max.
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0): 100nA max.
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc): 20nA max.

ON Characteristics:
DC Current Gain ((IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C): 35 min.
Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc): 0.3V max.
Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc): 0.6V min. ; 1.2V max.

SMALL-SIGNAL Characteristics:
Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz): 300MHz min.
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz): 8.0pF max.
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz): 25pF max.
Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz): 50min. ; 300 max.
Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz): 4.0dB max.

Manufactured by: ON Semiconductor®
Part Number: MPS2222ARL

Full Datasheet: ON Semiconductor® Transistor MPS2222ARL