S1227-66BR Si Photodiode Hamamatsu
Price: $55.00
10 available for immediate delivery
Code: G564APF12
Weight: 0.02oz
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Additional Information
Si PhotodiodesS1227 Series
For UV to visible, precision photometry
Features
- High UV Sensitivity
- Suppressed IR Sensitivity
- Low Dark Current
Maximum Ratings
Reverse Voltage: 5.0V
Operating Temperature: -20°C to 60°C
Storage Temperature: -20°C to 80°C
Electrical and Optical Characteristics (TA=25°C unless otherwise noted):
Spectral Response Range: 320 to 1000nm
Peak Sensitivity Wavelength: 720nm
Short Circuit Current (100 lx): 13uA min. ; 19uA typ.
Dark Current (VR = 10mV): 20pA max.
Rise Time (VR = 0V, RL = 1kΩ): 2us
Terminal Capacitance (VR = 0V, f = 10kHz): 950pF
Shunt Resistance (VR = 10mV): 0.5GΩ min. ; 5.0GΩ typ.
Dimensions:
Package: 8.9mm x 10.1mm
Active Area: 5.8mm x 5.8mm
Effective Active Area: 33mm
Applications:
- Analytical Equipment
- Optical Measurement Equipment
Manufactured by: Hamamatsu
Part Number: S1227-66BR
Full Datasheet: Hamamatsu Si Photodiodes S1227-66BR