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APT32F120J 33A 1200V N-Chanel Power MosFET Module Advanced Power Technology®

APT32F120J 33A 1200V N-Chanel Power MosFET Module Advanced Power Technology®

Manufacturer: Advanced Power Technology®
Part Number: APT32F120J
Capacitance (uF): .0182
Amps: 33
Voltage: 1200
Watts: 960
Ohms: .32
Package: SOT-227
Number Leads/Terminals: 4
Color: Black / Silver
Temperature: -55 to 150°C
Shape: Rectangular
Termination Method: Screw
Size (mm): 38.2 x 25.4 x 12.2

Price: $55.00
10 available for immediate delivery
Code: IC1021APV09
Weight: 1.20oz ONZ

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Additional Information

N-Channel Switch-Mode Power MosFET

Features:
- High Voltage
- Fast Switching
- Lower Gate Charge
- 100% Avalanche Tested

Drain to Source Breakdown Voltage: 1,200V
Gate-Source Voltage: +/-30V
Gate Threshold Voltage (max): 5V
Continuous Drain Current: 33A
Pulsed Drain Current: 195A
Avalanche Current (Repetitive or Non-Repetitive): 25A
Drain-Source On-State Resistance (max): 320 milliohm
Total Power Dissipation: 960W
Input Capacitance (max): 18,200pF
Total Gate Charge(max): 560nC
Operating Temperature: -55 to 150°C

Dimensions (excluding screws)
Length: 38.2mm (1.5")
Width: 25.4mm (1.0")
Height: 12.2mm (0.48")

Manufactured by: Advanced Power Technology® (acquired by Microsemi in 2005)
Part Number: APT32F120J

For reference only, we are providing a datasheet for this part number, please note that the information is from the company that acquired Advnced Power Technology®. West Florida Components assumes no liability for this information.

Full Datasheet: Power MOS 8™ Series Field Effect Transistors 33A 1,200V SOT-227