SKB06N60ATMA1 12A 600V 68W IGBT Transistor SMT Infineon®
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Manufacturer: Infineon®
Part Number: SKB06N60ATMA1
Capacitance (uF): .00035 (in) / .000038 (out)
Amps: 12
Voltage: 600
Watts: 68
Package: TO-263 (D2PAK)
Mounting: Surface Mount
Number Leads/Terminals: 2 + Tab
Color: Black
Temperature: -55 to 150°C
RoHS Compliant: Yes
Obsolete: Yes
Termination Method: Solder
Price: $3.00
250 available for immediate delivery
Code: IC335BPV11
Weight: 0.02oz
Additional Information
Surface Mount Isolated Gate Bipolar TransistorsOBSOLETE
Features:
- Very Tight Parameter Distribution
- High Ruggedness
- Temperature Stable Behavior
- Parallel Switching Capability
- Very Soft, Fast Recovery Anti-parallel EmCon Diode
Maximum Ratings
Collector-Emitter Voltage: 600V
DC Collector Current: 12V
Pulsed Collector Current: 24A
Diode Forward Current: 12A
Gate-Emitter Voltage: +/-20V
Short Circuit Withstand Time: 10us
Power Dissipation: 68W
Operating Temperature: -55 to 150°C
Switching Energy: 215uJ (typ)
Gate Charge: 32nC (typ)
Input Capacitance: 350pF
Output Capacitance: 38pF
Turn-on Delay Time: 25ns
Turn-off Delay Time: 220ns
Diode Reverse Recovery Time: 200ns
Manufactured by: Infineon®
Part Number: SKB06N60ATMA1
Full Datasheet: Infineon® SMD Fast IGBT Transistor PG-TO263-3-2
RoHS Compliant