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AM28F010-200JC AM28F010 CMOS IC AMD

AM28F010-200JC AM28F010 CMOS IC AMD

Manufacturer: AMD
Part Number: AM28F010-200JC

Price: $2.85
100 available for immediate delivery
Code: IC438PD12
Volume Pricing
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1-9$2.85
10-99$2.75
100+$2.60
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$8.85
$45.01
$55.00
$9.85
$55.01
$75.01
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$100.00
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Additional Information


CMOS Bulk Erase Flash Memory IC
1 Megabit (128K x 8-Bit)
12.0V
28 Pin PLCC Package

FEATURES:
High performance
CMOS Low power consumption
10,000 write/erase cycles minimum
Write and erase voltage 12.0 V ±5%
Latch-up protected to 100 mA from –1 V to VCC +1 V
Flasherase™ Electrical Bulk Chip-Erase
Command register architecture for microprocessor/microcontroller compatible write interface
On-chip address and data latches
Advanced CMOS flash memory technology
Automatic write/erase pulse stop timer

DC CHARACTERISTICS:
Input Leakage Current (VCC=VCC Max, VIN=VCC or VSS): ±1.0uA max.
VCC Standby Current(VCC=VCC Max, CE#=VCC + 0.5 V): 15uA typ.
VCC Read Current(VCC=VCC Max, CE#=VIL, OE#=VIH, IOUT = 0 mA, at 6 MHz): 20mA typ.
Input Low Voltage: -0.5V to 0.8V
Input High Voltage: 0.7VCC to VCC+5.0V
Low VCC Lock-out Voltage: 3.2V min. ; 3.7V typ.

SWITCHING AC CHARATERISTICS (Read Only operation):
Read Cycle Time: 200ns max.
Output Enable Access Time: 55ns max.
Chip Disable to Output in High Z: 35ns max.
Output Enable to Output in Low Z: 0ns min.
Write Recovery Time before Read: 6us

AC CHARATERISTICS (Write/Erase/Program Operations):
Write Cycle Time: 200ns min.
Address Hold Time: 75ns min.
Data Setup Time: 50ns min.
Write Recovery Time Before Read: 6us
Write Pulse Width High: 20us
Duration of Erase Operation: 9.5ns

Manufactured by: AMD
Part Number: AM28F010-200JC

Full Datasheet: AM28F010-200JC