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H11B1 Photon Coupled Isolator IC GE

H11B1 Photon Coupled Isolator IC GE

Manufacturer: General Electric
Part Number: H11B1

Price: $0.75
60 available for immediate delivery
Code: IC446PE01
Weight: 0.02oz ONZ
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Additional Information


Photon Coupled Isolators
Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier

MAXIMUM RATINGS @ 25C:
Infrared Emitting Diode:
- Power Dissipation: 100mW
- Derate 1.33mW/C above TA 25C
- Forward Current (Continuous): 60mA
- Forward Current (Peak): 3A
(Pulse Width 1us 300P Ps)
- Reverse Voltage: 3V
Photo-Darlington:
- Power Dissipation: 150mW
- Derate 2.0mW/C above TA 25C
- VCEO: 25V
- VCBO: 30V
- VECO: 7.0V
- Collector Current (Continuous): 100mA

INDIVIDUAL ELECTRICAL CHARACTERISTICS @ 25C
Infrared Emitting Diode:
- Forward Voltage (IF=10mA): 1.1V typ.
- Reverse Current (VR=3V): 10 microamps max.
- Capacitance (V=O,f=1MHz): 50pF typ.
Photo Transistor
Breakdown Voltage V(BR)CEO (IC=10mA, IF=0): 25V min.
Breakdown Voltage V(BR)CBO (IC=100uA, IF=0): 30V min.
Breakdown Voltage V(BR)EBO (IC=100uA, IF=0): 7V min.
Collector Dark Current ICEO (VCE=10V, IF=0): 5nA typ.
Capacitance (VCE=10V, f=1MHz): 6pF typ.

COUPLED ELECTRICAL CHARACTERISTICS:
DC Current Transfer Ratio(IF=1mA, VCE=5V): 500% min.
Saturation Voltage-Collector to Emitter(IF=1mA, IC=1mA): 0.7V typ.
Isolation Resistance(Input to Output Voltage=500Vdc): 100GΩ
Input to Output Capacitance (Input to Output Voltage=O,f=1MHz): 2pF max.

Manufactured by: General Electric
Part Number: H11B1

Full Datasheet: H11B1